skip to main content
US FlagAn official website of the United States government
dot gov icon
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
https lock icon
Secure .gov websites use HTTPS
A lock ( lock ) or https:// means you've safely connected to the .gov website. Share sensitive information only on official, secure websites.


Search for: All records

Award ID contains: 2102257

Note: When clicking on a Digital Object Identifier (DOI) number, you will be taken to an external site maintained by the publisher. Some full text articles may not yet be available without a charge during the embargo (administrative interval).
What is a DOI Number?

Some links on this page may take you to non-federal websites. Their policies may differ from this site.

  1. Abstract Metal halide perovskites show promise for next-generation light-emitting diodes, particularly in the near-infrared range, where they outperform organic and quantum-dot counterparts. However, they still fall short of costly III-V semiconductor devices, which achieve external quantum efficiencies above 30% with high brightness. Among several factors, controlling grain growth and nanoscale morphology is crucial for further enhancing device performance. This study presents a grain engineering methodology that combines solvent engineering and heterostructure construction to improve light outcoupling efficiency and defect passivation. Solvent engineering enables precise control over grain size and distribution, increasing light outcoupling to ~40%. Constructing 2D/3D heterostructures with a conjugated cation reduces defect densities and accelerates radiative recombination. The resulting near-infrared perovskite light-emitting diodes achieve a peak external quantum efficiency of 31.4% and demonstrate a maximum brightness of 929 W sr−1m−2. These findings indicate that perovskite light-emitting diodes have potential as cost-effective, high-performance near-infrared light sources for practical applications. 
    more » « less
    Free, publicly-accessible full text available December 1, 2025
  2. Free, publicly-accessible full text available July 30, 2026
  3. Not AvailableTwo-dimensional halide perovskites (2D-HPs) are of significant interest for their applications in optoelectronic devices. Part of this increased interest in 2D-HPs stems from their increased stability relative to their 3D counterparts. Here, the origin of higher stability in 2D-HPs is mainly attributed to the bulky ammonium cation layers, which can act as a blocking layer against moisture and oxygen ingression and ion diffusion. While 2D-HPs have demonstrated increased stability, it is not clear how the structure of the ammonium ion impacts the material stability. Herein, we investigate how the structure of ammonium cations, including three n-alkyl ammoniums, phenethylammonium (PEA) and five PEA derivatives, anilinium (An), benzylammonium (BzA), and cyclohexylmethyl ammonium (CHMA), affects the crystal structure and air, water, and oxygen stability of 2D tin halide perovskites (2D-SnHPs). We find that stability is influenced by several factors, including the molecular packing and intermolecular interactions in the organic layer, steric effects around the ammonium group, the orientation distribution of the 2D sheets, and the hydrophobicity of the perovskite film surface. With superior hydrophobicity, strong interactions between organic layers, and a high extent of parallel oriented inorganic sheets, the 2-(4-trifluoromethyl-phenyl)-ethylammonium (4-TFMPEA) ion forms the most stable 2D-SnHP among the 12 ammonium cations investigated. 
    more » « less
    Free, publicly-accessible full text available November 26, 2025