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Abstract The controlled creation and manipulation of defects in 2D materials has become increasingly popular as a means to design and tune new material functionalities. However, defect characterization by direct atomic-scale imaging is often severely limited by surface contamination due to a blanket of hydrocarbons. Thus, analysis techniques that can characterize atomic-scale defects despite the contamination layer are advantageous. In this work, we take inspiration from X-ray absorption spectroscopy and use broad-beam electron energy loss spectroscopy (EELS) to characterize defect structures in 2D hexagonal boron nitride (hBN) based on averaged fine structure in the boron K-edge. Since EELS is performed in a transmission electron microscope (TEM), imaging can be performed in-situ to assess contamination levels and other factors such as tears in the fragile 2D sheets, which can affect the spectroscopic analysis. We demonstrate the TEM-EELS technique for 2D hBN samples irradiated with different ion types and doses, finding spectral signatures indicative of boron–oxygen bonding that can be used as a measure of sample defectiveness depending on the ion beam treatment. We propose that even in cases where surface contamination has been mitigated, the averaging-based TEM-EELS technique can be useful for efficient sample surveys to support atomically resolved EELS experiments. 

The focused helium ion beam microscope is a versatile imaging and nanofabrication instrument enabling direct-write lithography with sub-10 nm resolution. Subsurface damage and swelling of substrates due to helium ion implantation is generally unwanted. However, these effects can also be leveraged for specific nanofabrication tasks. To explore this, we investigate focused helium ion beam induced swelling of bulk crystalline silicon and free-standing amorphous silicon nitride membranes using various irradiation strategies. We show that the creation of near-surface voids due to helium ion implantation can be used to induce surface nanostructure and create subsurface nanochannels. By tailoring the ion dose and beam energy, the size and depth of the swollen features can be controlled. Swelling heights of several hundred nanometers are demonstrated, and for the embedded nanochannels, void internal diameters down to 30 nm are shown. Potential applications include the engineering of texturized substrates and the prototyping of on-chip nanofluidic transport devices. 

Synaptic plasticity, the dynamic tuning of signal transmission strength between neurons, serves as a fundamental basis for memory and learning in biological organisms. This adaptive nature of synapses is considered one of the key features contributing to the superior energy efficiency of the brain. Here, we use molecular dynamics simulations to demonstrate synaptic-like plasticity in a subnanoporous two-dimensional membrane. We show that a train of voltage spikes dynamically modifies the membrane’s ionic permeability in a process involving competitive bicationic transport. This process is shown to be repeatable after a given resting period. Because of a combination of subnanometer pore size and the atomic thinness of the membrane, this system exhibits energy dissipation of 0.1 to 100 aJ per voltage spike, which is several orders of magnitude lower than 0.1 to 10 fJ per spike in the human synapse. We reveal the underlying physical mechanisms at molecular detail and investigate the local energetics underlying this apparent synaptic-like behavior.