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Planar Josephson junctions (JJs), based on common superconductors and III–V semiconductors, are sought for Majorana states and fault-tolerant quantum computing. However, with gate-tunable spin–orbit coupling (SOC), we show that the range of potential applications of such JJs becomes much broader. The time-dependent SOC offers unexplored mechanisms for switching JJs, accompanied by the 2π-phase jumps and the voltage pulses corresponding to the single-flux-quantum transitions, key to high-speed and low-power superconducting electronics. In a constant applied magnetic field, with Rashba and Dresselhaus SOC, anharmonic current-phase relations, calculated microscopically in these JJs, yield a nonreciprocal transport and superconducting diode effect. Together with the time-dependent SOC, this allows us to identify a switching mechanism at no applied current bias, which supports fractional-flux-quantum superconducting circuits and neuromorphic computing.

 

A planar Josephson junction is a versatile platform to realize topological superconductivity over a large parameter space and host Majorana bound states. With a change in the Zeeman field, this system undergoes a transition from trivial to topological superconductivity accompanied by a jump in the superconducting phase difference between the two superconductors. A standard model of these Josephson junctions, which can be fabricated to have a nearly perfect interfacial transparency, predicts a simple universal behavior. In that model, at the same value of Zeeman field for the topological transition, there is a π phase jump and a minimum in the critical superconducting current, while applying a controllable phase difference yields a diamond-shaped topological region as a function of that phase difference and a Zeeman field. In contrast, even for a perfect interfacial transparency, we find a much richer and nonuniversal behavior as the width of the superconductor is varied or the Dresselhaus spin–orbit coupling is considered. The Zeeman field for the phase jump, not necessarily π, is different from the value for the minimum critical current, while there is a strong deviation from the diamond-like topological region. These Josephson junctions show a striking example of a nonreciprocal transport and superconducting diode effect, revealing the importance of our findings not only for topological superconductivity and fault-tolerant quantum computing but also for superconducting spintronics.

 

Magnetic tunnel junctions (MTJs) with conventional bulk ferromagnets separated by a nonmagnetic insulating layer are key building blocks in spintronics for magnetic sensors and memory. A radically different approach of using atomically-thin van der Waals (vdW) materials in MTJs is expected to boost their figure of merit, the tunneling magnetoresistance (TMR), while relaxing the lattice-matching requirements from the epitaxial growth and supporting high-quality integration of dissimilar materials with atomically-sharp interfaces. We report TMR up to 192% at 10 K in all-vdW Fe3GeTe2/GaSe/Fe3GeTe2 MTJs. Remarkably, instead of the usual insulating spacer, this large TMR is realized with a vdW semiconductor GaSe. Integration of semiconductors into the MTJs offers energy-band-tunability, bias dependence, magnetic proximity effects, and spin-dependent optical-selection rules. We demonstrate that not only the magnitude of the TMR is tuned by the semiconductor thickness but also the TMR sign can be reversed by varying the bias voltages, enabling modulation of highly spin-polarized carriers in vdW semiconductors. 

Lasers with injected spin-polarized carriers show an outstanding performance in both static and dynamic operation. In addition to the intensity response of conventional lasers, without spin-polarized carriers, both intensity and polarization of light can be exploited for optical communication in spin-lasers. However, the polarization dynamics of spin-lasers under amplitude modulation has been largely overlooked. Here, we reveal, analytically and numerically, a nontrivial polarization response that accompanies the well-known intensity dynamics of a spin-laser under amplitude modulation. We evaluate the polarization and intensity response under the same amplitude modulation and further assess the capability of such a polarization response in digital data transfer with eye diagram simulations. Our results provide a more complete understanding of the modulation response in spin-lasers and open up unexplored opportunities in optical communication and spintronics.