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Silicon vacancy (VSi) centers in 4H-silicon carbide have emerged as a strong candidate for quantum networking applications due to their robust electronic and optical properties, including a long spin coherence lifetime and bright, stable emission. Here, we report the integration of VSi centers with a plasmonic nanocavity to Purcell enhance the emission, which is critical for scalable quantum networking. Employing a simple fabrication process, we demonstrate plasmonic cavities that support a nanoscale mode volume and exhibit an increase in the spontaneous emission rate with a measured Purcell factor of up to 48. In addition to investigating the optical resonance modes, we demonstrate an improvement in the optical stability of the spin-preserving resonant optical transitions relative to the radiation-limited value. The results highlight the potential of nanophotonic structures for advancing quantum networking technologies and emphasize the importance of optimizing emitter−cavity interactions for efficient quantum photonic applications. 

Abstract The maximum amount of entanglement achievable under passive transformations by continuous-variable states is called the entanglement potential. Recent work has demonstrated that the entanglement potential is upper-bounded by a simple function of the squeezing of formation, and that certain classes of two-mode Gaussian states can indeed saturate this bound, though saturability in the general case remains an open problem. In this study, we introduce a larger class of states that we prove saturates the bound, and we conjecture that all two-mode Gaussian states can be passively transformed into this class, meaning that for all two-mode Gaussian states, entanglement potential is equivalent to squeezing of formation. We provide an explicit algorithm for the passive transformations and perform extensive numerical testing of our claim, which seeks to unite the resource theories of two characteristic quantum properties of continuous-variable systems.