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Abstract We report the perpendicular critical field H_c2properties of disordered Re-Al bilayers via magnetotransport measurements. The bilayers consisted of a d_Re= 3 nm bottom layer of Re and an upper Al layer with thickness varying between d_Al= 0-3 nm. We find that in this range of Al thicknesses, the bilayer transition temperature T_cincreases with increasing Al thickness, although their monolayer counterparts have T^Re_c> T^Al_c. Furthermore, H_c2of the bilayers has a local maximum at an Al coverage of 1.5 nm with a critical field that is 50% larger than that of the standalone 3 nm Re film. At higher Al thicknesses H_c2drops rapidly but remains more than an order of magnitude greater that that of comparable thickness standalone Al film. Our data show that a thin, disordered Re under-layer can dramatically increase the magnetic field tolerance of the Al over-layer. This would allow one to retain the desirable chemical and metallurgical properties of Al without sacrificing high field compatibility in quantum circuits, such as topological qubit devices.