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Abstract In this work, we explore how the optical properties of isotropic materials can be modulated by adjacent anisotropic materials, providing new insights into anisotropic light-matter interactions in van der Waals heterostructures. Using a WS₂/ReS₂heterostructure, we systematically investigated the excitation angle-dependent photoluminescence (PL), differential reflectance, time-resolved PL, and power-dependent PL anisotropy of WS₂. Our findings reveal that the anisotropic optical response of WS₂, influenced by the crystallographically low symmetry and unique dielectric environment of ReS₂, significantly impacts both the optical and temporal behavior of WS₂. We observed that the emission anisotropy increases with optical power density, highlighting that anisotropic localization of photo-generated carriers and subsequent charge transfer dynamics are key contributors to the polarization-sensitive optical response. These findings provide a framework for leveraging optical density-sensitive anisotropy mirroring to design advanced anisotropic optoelectronic and photonic devices. 

Abstract Tightly bound electron-hole pairs (excitons) hosted in atomically-thin semiconductors have emerged as prospective elements in optoelectronic devices for ultrafast and secured information transfer. The controlled exciton transport in such excitonic devices requires manipulating potential energy gradient of charge-neutral excitons, while electrical gating or nanoscale straining have shown limited efficiency of exciton transport at room temperature. Here, we report strain gradient induced exciton transport in monolayer tungsten diselenide (WSe₂) across microns at room temperature via steady-state pump-probe measurement. Wrinkle architecture enabled optically-resolvable local strain (2.4%) and energy gradient (49 meV/μm) to WSe₂. We observed strain gradient induced flux of high-energy excitons and emission of funneled, low-energy excitons at the 2.5 μm-away pump point with nearly 45% of relative emission intensity compared to that of excited excitons. Our results strongly support the strain-driven manipulation of exciton funneling in two-dimensional semiconductors at room temperature, opening up future opportunities of 2D straintronic exciton devices.