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Abstract Mixed‐conducting perovskites are workhorse electrochemically active materials, but typical high‐temperature processing compromises their catalytic activity and chemo‐mechanical integrity. Low‐temperature pulsed laser deposition of amorphous films plus mild thermal annealing is an emerging route to form homogeneous mixed conductors with exceptional catalytic activity, but little is known about the evolution of the oxide‐ion transport and transference numbers during crystallization. Here the coupled evolution of ionic and electronic transport behavior and structure in room‐temperature‐grown amorphous (La,Sr)(Ga,Fe)O_3‐xfilms as they crystallize is explored.In situ ac‐impedance spectroscopy with and without blocking electrodes, simultaneous capturingsynchrotron‐grazing‐incidence X‐ray diffraction, dc polarization, transmission electron microscopy, and molecular dynamics simulations are combined to evaluate isothermal and non‐isothermal crystallization effects and the role of grain boundaries on transference numbers. Ionic conductivity increases by ≈2 orders of magnitude during crystallization, with even larger increases in electronic conductivity. Consequently, as crystallinity increases, LSGF transitions from a predominantly ionic conductor to a predominantly electronic conductor. The roles of evolving lattice structural order, microstructure, and defect chemistry are examined. Grain boundaries appear relatively nonblocking electronically but significantly blocking ionically. The results demonstrate that ionic transference numbers can be tailored over a wide range by tuning crystallinity and microstructure without having to change the cation composition. 

Abstract Two-dimensional van der Waals materials such as graphene present an opportunity for band structure engineering using custom superlattice potentials. In this study, we demonstrate how self-assemblies of magnetic iron-oxide (Fe₃O₄) nanospheres stacked on monolayer graphene generate a proximity-induced magnetic superlattice in graphene and modify its band structure. Interactions between the nanospheres and the graphene layer generate superlattice Dirac points in addition to a gapped energy spectrum near the K and K′ valleys, resulting in magnetic confinement of quasiparticles around the nanospheres. This is evidenced by gate-dependent resistance oscillations, observed in our low temperature transport measurements, and confirmed by self-consistent tight binding calculations. Furthermore, we show that an external magnetic field can tune the magnetic superlattice potential created by the nanospheres, and thus the transport characteristics of the system. This technique for magnetic-field-tuned band structure engineering using magnetic nanostructures can be extended to a broader class of 2D van der Waals and topological materials. 

Abstract Source/Drain extension doping is crucial for minimizing the series resistance of the ungated channel and reducing the contact resistance of field‐effect transistors (FETs) in complementary metal–oxide–semiconductor (CMOS) technology. 2D semiconductors, such as MoS₂and WSe₂, are promising channel materials for beyond‐silicon CMOS. A key challenge is to achieve extension doping for 2D monolayer FETs without damaging the atomically thin material. This work demonstrates extension doping with low‐resistance contacts for monolayer WSe₂p‐FETs. Self‐limiting oxidation transforms a bilayer WSe₂into a hetero‐bilayer of a high‐work‐function WO_xSe_yon a monolayer WSe₂. Then, damage‐free nanolithography defines an undoped nano‐channel, preserving the high on‐current of WO_xSe_y‐doped FETs while significantly improving their on/off ratio. The insertion of an amorphous WO_xSe_yinterlayer under the contacts achieves record‐low contact resistances for monolayer WSe₂over a hole density range of 10¹²to 10¹³cm⁻²(1.2 ± 0.3 kΩ µm at 10¹³cm⁻²). The WO_xSe_y‐doped extension exhibits a sheet resistance as low as 10 ± 1 kΩ □⁻¹. Monolayer WSe₂p‐FETs with sub‐50 nm channel lengths reach a maximum drain current of 154 µA µm⁻¹with an on/off ratio of 10⁷–10⁸. These results define strategies for nanometer‐scale selective‐area doping in 2D FETs and other 2D architectures. 

Abstract The ongoing reduction in transistor sizes drives advancements in information technology. However, as transistors shrink to the nanometer scale, surface and edge states begin to constrain their performance. 2D semiconductors like transition metal dichalcogenides (TMDs) have dangling‐bond‐free surfaces, hence achieving minimal surface states. Nonetheless, edge state disorder still limits the performance of width‐scaled 2D transistors. This work demonstrates a facile edge passivation method to enhance the electrical properties of monolayer WSe₂nanoribbons, by combining scanning transmission electron microscopy, optical spectroscopy, and field‐effect transistor (FET) transport measurements. Monolayer WSe₂nanoribbons are passivated with amorphous WO_xSe_yat the edges, which is achieved using nanolithography and a controlled remote O₂plasma process. The same nanoribbons, with and without edge passivation are sequentially fabricated and measured. The passivated‐edge nanoribbon FETs exhibit 10 ± 6 times higher field‐effect mobility than the open‐edge nanoribbon FETs, which are characterized with dangling bonds at the edges. WO_xSe_yedge passivation minimizes edge disorder and enhances the material quality of WSe₂nanoribbons. Owing to its simplicity and effectiveness, oxidation‐based edge passivation could become a turnkey manufacturing solution for TMD nanoribbons in beyond‐silicon electronics and optoelectronics. 

We demonstrate focusing as well as imaging using diffractive microoptics, manufactured by two-photon polymerization grayscale lithography (2GL), that have been 3D printed into porous silicon oxide. While typical doublet lens systems require support structures that hold the lenses in place, our optics are held by the porous media itself, decreasing both the fabrication time and design constraints while increasing the optically active area. Compared to the typical two-photon polymerization fabrication process, 2GL offers better shape accuracy while simultaneously increasing throughput. To showcase 2GL manufactured optics in porous media, we fabricate singlet diffractive lenses with a diameter of 500 µm and numerical apertures of up to 0.6. We measure the intensity distribution in the focal plane, and along the optical axis. Furthermore, we design and fabricate a doublet lens system for imaging purposes with a diameter of 600 µm and thinner than 60 µm. We examine the imaging performance with a USAF 1951 resolution test chart and determine the resolution to be 287 lp/mm. 3D printing in porous SiO₂thus holds great promise for future complex and unconventional microoptical solutions.