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Abstract The Scintillating Bubble Chamber (SBC) collaboration purchased 32 Hamamatsu VUV4 silicon photomultipliers (SiPMs) for use in SBC-LAr10, a bubble chamber containing 10 kg of liquid argon. A dark-count characterization technique, which avoids the use of a single-photon source, was used at two temperatures to measure the VUV4 SiPMs breakdown voltage (V_BD), the SiPM gain (g_SiPM), the rate of change ofg_SiPMwith respect to voltage (m), the dark count rate (DCR), and the probability of a correlated avalanche (P_CA) as well as the temperature coefficients of these parameters. A Peltier-based chilled vacuum chamber was developed at Queen's University to cool down the Quads to 233.15 ± 0.2 K and 255.15 ± 0.2 K with average stability of ±20 mK. An analysis framework was developed to estimate V_BDto tens of mV precision and DCR close to Poissonian error. The temperature dependence of V_BDwas found to be 56 ± 2 mV K^-1, andmon average across all Quads was found to be (459 ± 3(stat.)±23(sys.))× 10³e^-PE^-1V^-1. The average DCR temperature coefficient was estimated to be 0.099 ± 0.008 K^-1corresponding to a reduction factor of 7 for every 20 K drop in temperature. The average temperature dependence of P_CAwas estimated to be 4000 ± 1000 ppm K^-1. P_CAestimated from the average across all SiPMs is a better estimator than the P_CAcalculated from individual SiPMs, for all of the other parameters, the opposite is true. All the estimated parameters were measured to the precision required for SBC-LAr10, and the Quads will be used in conditions to optimize the signal-to-noise ratio.