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  1. Free, publicly-accessible full text available May 1, 2026
  2. We present theoretical observations on the topological nature of strained III–V semiconductors. By k·p perturbation, it can be shown that the strain-engineered conduction band hosts a Kramers–Weyl node at the Γ point. It is theoretically shown that a curated strain can create and then tune the sign of the topological charge. Furthermore, we outline experimental methods for both the realization and detection of strain-induced topological phase transitions. 
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    Free, publicly-accessible full text available February 24, 2026