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We present our study on AlInN-based ultraviolet (UV) core-shell nanowire light-emitting diodes (LEDs) utilizing a polarization-induced doping technique. Due to the formation of a core-shell structure, the non-radiative recombination on the nanowire surface is significantly reduced. Moreover, we have successfully fabricated AlInN/GaN-based core-shell nanowire UV LED employing polarization-engineered quantum barriers instead of conventional structures. The LED device exhibits significantly improved carrier concentration in the active region and decreased electron leakage due to the gradually raised effective conduction band barrier heights. At room temperature, the AlInN LEDs exhibit strong and stable emission at 296 nm. We provide a promising approach to fabricating high-performance light emitters. 

From the past research results, it is evident that high-energy blue emission requires higher applied voltage in a blue nanowire light-emitting diode (LED) due to which difficulties such as self-heating and poor efficiency are developed. While designing a nanowire LED with III-nitride materials, the radiative recombination rate is reduced as the internal field of polarization inside the existing Ga-polar LEDs will tilt the energy band. But with the involvement of N-polar characteristics, the polarization field direction is reversed which eventually brings higher efficiency and lower turn-on voltage across the wavelength range. The subject of this work is to design and simulate an N-polar tunnel junction (TJ) blue nanowire LED to obtain better thermal as well as opto-electronic performances with minimal turn-on voltage. Moreover, TJ-LEDs show linear increases in light output powers (LOP) with varying current densities due to lower Auger recombination rates in their multi-quantum wells (MQWs). Within a temperature range of 30–150 , the proposed device obtains a lower thermal droop of 5.2 % at a current density of 40 A/cm2 which is 2.2 times less than the conventional one. 

In this paper, in order to address the problem of electron leakage in AlGaN ultra-violet light-emitting diodes, we have proposed an electron-blocking free layer AlGaN ultra-violet (UV) light-emitting diode (LED) using polarization-engineered heart-shaped AlGaN quantum barriers (QB) instead of conventional barriers. This novel structure has decreased the downward band bending at the interconnection between the consecutive quantum barriers and also flattened the electrostatic field. The parameters used during simulation are extracted from the referred experimental data of conventional UV LED. Using the Silvaco Atlas TCAD tool; version 8.18.1.R, we have compared and optimized the optical as well as electrical characteristics of three varying LED structures. Enhancements in electroluminescence at 275 nm (52.7%), optical output power (50.4%), and efficiency (61.3%) are recorded for an EBL-free AlGaN UV LED with heart-shaped Al composition in the barriers. These improvements are attributed to the minimized non-radiative recombination on the surfaces, due to the progressively increasing effective conduction band barrier height, which subsequently enhances the carrier confinement. Hence, the proposed EBL-free AlGaN LED is the potential solution to enhance optical power and produce highly efficient UV emitters.