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Title: Application of Insulated Gate Bipolar Transistor in Transcranial Magnetic Stimulation System Development
Award ID(s):
1631820
PAR ID:
10028036
Author(s) / Creator(s):
; ;
Date Published:
Journal Name:
International Semiconductor Device Research Symposium (ISDRS)
Page Range / eLocation ID:
FP1-02
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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