Application of Insulated Gate Bipolar Transistor in Transcranial Magnetic Stimulation System Development
- Award ID(s):
- 1631820
- PAR ID:
- 10028036
- Date Published:
- Journal Name:
- International Semiconductor Device Research Symposium (ISDRS)
- Page Range / eLocation ID:
- FP1-02
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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