Yap, Wui Chung, Jiang, Hao, Liu, Jialun, Xia, Qiangfei, and Zhu, Wenjuan. Ferroelectric transistors with monolayer molybdenum disulfide and ultra-thin aluminum-doped hafnium oxide. Applied Physics Letters 111.1 Web. doi:10.1063/1.4991877.

Yap, Wui Chung, Jiang, Hao, Liu, Jialun, Xia, Qiangfei, & Zhu, Wenjuan. Ferroelectric transistors with monolayer molybdenum disulfide and ultra-thin aluminum-doped hafnium oxide. Applied Physics Letters, 111 (1). https://doi.org/10.1063/1.4991877

Yap, Wui Chung, Jiang, Hao, Liu, Jialun, Xia, Qiangfei, and Zhu, Wenjuan. "Ferroelectric transistors with monolayer molybdenum disulfide and ultra-thin aluminum-doped hafnium oxide". Applied Physics Letters 111 (1). United States: American Institute of Physics. https://doi.org/10.1063/1.4991877. https://par.nsf.gov/biblio/10030882.

@article{osti_10030882,
place = {United States}, title = {Ferroelectric transistors with monolayer molybdenum disulfide and ultra-thin aluminum-doped hafnium oxide}, url = {https://par.nsf.gov/biblio/10030882}, DOI = {10.1063/1.4991877}, abstractNote = {Not Available}, journal = {Applied Physics Letters}, volume = {111}, number = {1}, publisher = {American Institute of Physics}, author = {Yap, Wui Chung and Jiang, Hao and Liu, Jialun and Xia, Qiangfei and Zhu, Wenjuan}, }