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Title: Origin of high hole concentrations in Mg-doped GaN films: Origin of high hole concentrations in Mg-doped GaN films
Award ID(s):
1710032
NSF-PAR ID:
10036510
Author(s) / Creator(s):
 ;  ;  ;  ;  ;  
Publisher / Repository:
Wiley Blackwell (John Wiley & Sons)
Date Published:
Journal Name:
physica status solidi (b)
Volume:
254
Issue:
8
ISSN:
0370-1972
Page Range / eLocation ID:
1600668
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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