Origin of high hole concentrations in Mg-doped GaN films: Origin of high hole concentrations in Mg-doped GaN films
- Award ID(s):
- 1710032
- NSF-PAR ID:
- 10036510
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- physica status solidi (b)
- Volume:
- 254
- Issue:
- 8
- ISSN:
- 0370-1972
- Page Range / eLocation ID:
- 1600668
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation