An official website of the United States government Here's how you know

Official websites use .gov

A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS

A lock ( lock ) or https:// means you've safely connected to the .gov website. Share sensitive information only on official, secure websites.

PAR Home Contact FAQ

PAR Home
Contact
FAQ

Explore Research Products in the PAR
It may take a few hours for recently added research products to appear in PAR search results.

+ Advanced Search

Advanced Search Options

Search Across All Fields

Subject(s) / Keyword(s):

Identifier Number: What does this include?

Resource Type:

Search a Specific Field

Journal Name:

Description / Abstract:

Title:

Date Published:

Publisher or Repository Name:

Award ID:

Author / Creator:

Date Updated:

Home
Search Results
Page 1 of 1

Search for: All records

Award ID contains: 1710032

Sort by Date (newest first)
Sort by Date (oldest first)
Sort by Relevance

« Prev Select page number Next »

Total Resources

5

Resource Type
Audiovisual

0

Book

0

Book Chapter

0

Conference Paper

0

Conference Proceeding

0

Data Paper

0

Dataset

0

Dissertation

0

Educational aid or Curriculum

0

Journal Article

5

Model

0

Posted Content

0

Service

0

Software

0

Sound

0

Workshop Report

0
More

Availability
Full Text / Resource Available

5

Citation Only

0

Author / Contributor
Filter by Author / Creator
Filter by Editor

Save Results
Excel (limit 2000)
CSV (limit 5000)
XML (limit 5000)

Have feedback or suggestions for a way to improve these results?
!

Note: When clicking on a Digital Object Identifier (DOI) number, you will be taken to an external site maintained by the publisher. Some full text articles may not yet be available without a charge during the embargo (administrative interval).
What is a DOI Number?

Some links on this page may take you to non-federal websites. Their policies may differ from this site.

Observation and mitigation of RF-plasma-induced damage to III-nitrides grown by molecular beam epitaxy

https://doi.org/10.1063/1.5097557

Clinton, Evan A.; Vadiee, Ehsan; Tellekamp, M. Brooks; Doolittle, W. Alan (July 2019, Journal of Applied Physics)
InGaN solar cells with regrown GaN homojunction tunnel contacts

https://doi.org/10.7567/APEX.11.082304

Vadiee, Ehsan; Clinton, Evan A.; McFavilen, Heather; Weidenbach, Alex S.; Engel, Zachary; Matthews, Christopher; Zhang, Chaomin; Arena, Chantal; King, Richard R.; Honsberg, Christiana B.; et al (August 2018, Applied Physics Express)

Full Text Available
Negative differential resistance in GaN homojunction tunnel diodes and low voltage loss tunnel contacts

https://doi.org/10.1063/1.5035293

Clinton, Evan A.; Vadiee, Ehsan; Shen, Shyh-Chiang; Mehta, Karan; Yoder, P. Douglas; Doolittle, W. Alan (June 2018, Applied Physics Letters)
A review of the synthesis of reduced defect density In x Ga 1−x N for all indium compositions

https://doi.org/10.1016/j.sse.2017.06.020

Clinton, Evan A.; Vadiee, Ehsan; Fabien, Chloe A.M.; Moseley, Michael W.; Gunning, Brendan P.; Doolittle, W. Alan; Fischer, Alec M.; Wei, Yong O.; Xie, Hongen; Ponce, Fernando A. (October 2017, Solid-State Electronics)

Full Text Available
Origin of high hole concentrations in Mg-doped GaN films: Origin of high hole concentrations in Mg-doped GaN films

https://doi.org/10.1002/pssb.201600668

Fischer, A. M.; Wang, S.; Ponce, F. A.; Gunning, B. P.; Fabien, C. A.; Doolittle, W. A. (August 2017, physica status solidi (b))

« Prev Select page number Next »

Website Policies | Budget and Performance | Inspector General | Privacy | FOIA | No FEAR Act | USA.gov | Accessibility | Plain Language | Contact | Help

The National Science Foundation, 2415 Eisenhower Avenue, Alexandria, Virginia 22314, USA Tel: (703) 292-5111, FIRS: (800) 877-8339 | TDD: (800) 281-8749

Author Select

Last Name:

First Name:

Search Results
Selected Authors

Type in a name, or the first few letters of a name, in one or both of appropriate search boxes above and select the search button. An attempt will be made to match authors that most closely relate to the text you typed.

No authors are currently selected. Choosing "Select These Authors" will enter a blank value for author search in the parent form.

Editor Select

Last Name:

First Name:

Search Results
Selected Editors

Type in a name, or the first few letters of a name, in one or both of appropriate search boxes above and select the search button. An attempt will be made to match editors that most closely relate to the text you typed.

No editors are currently selected. Choosing "Select These Editors" will enter a blank value for editor search in the parent form.

Warning: Leaving National Science Foundation Website

You are now leaving the National Science Foundation website to go to a non-government website.

Website:

NSF takes no responsibility for and exercises no control over the views expressed or the accuracy of the information contained on this site. Also be aware that NSF's privacy policy does not apply to this site.