Li, Xiaohang, Wang, Shuo, Liu, Hanxiao, Ponce, Fernando, Detchprohm, Theeradetch, and Dupuis, Russell. Growth of single-phase wurtzite BAlN with 7.2%-B contents. Retrieved from https://par.nsf.gov/biblio/10043793. 2016 Conference on Lasers and Electro-Optics, CLEO 2016 .

Li, Xiaohang, Wang, Shuo, Liu, Hanxiao, Ponce, Fernando, Detchprohm, Theeradetch, & Dupuis, Russell. Growth of single-phase wurtzite BAlN with 7.2%-B contents. 2016 Conference on Lasers and Electro-Optics, CLEO 2016, (). Retrieved from https://par.nsf.gov/biblio/10043793.

Li, Xiaohang, Wang, Shuo, Liu, Hanxiao, Ponce, Fernando, Detchprohm, Theeradetch, and Dupuis, Russell. "Growth of single-phase wurtzite BAlN with 7.2%-B contents". 2016 Conference on Lasers and Electro-Optics, CLEO 2016 (). Country unknown/Code not available. https://par.nsf.gov/biblio/10043793.

@article{osti_10043793,
place = {Country unknown/Code not available}, title = {Growth of single-phase wurtzite BAlN with 7.2%-B contents}, url = {https://par.nsf.gov/biblio/10043793}, abstractNote = {We report on growth of 100-nm single-phase wurtzite BAlN layers with B contents up to 7.2% by MOCVD, which can be potentially applied to deep UV DBRs for VCSELs.}, journal = {2016 Conference on Lasers and Electro-Optics, CLEO 2016}, author = {Li, Xiaohang and Wang, Shuo and Liu, Hanxiao and Ponce, Fernando and Detchprohm, Theeradetch and Dupuis, Russell}, }