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Abstract Hyperbolic metamaterials (HMM) possess significant anisotropic physical properties and tunability and thus find many applications in integrated photonic devices. HMMs consisting of metal and dielectric phases in either multilayer or vertically aligned nanocomposites (VAN) form are demonstrated with different hyperbolic properties. Herein, self‐assembled HfO2‐Au/TiN‐Au multilayer thin films, combining both the multilayer and VAN designs, are demonstrated. Specifically, Au nanopillars embedded in HfO2and TiN layers forming the alternative layers of HfO2‐Au VAN and TiN‐Au VAN. The HfO2and TiN layer thickness is carefully controlled by varying laser pulses during pulsed laser deposition (PLD). Interestingly, tunable anisotropic physical properties can be achieved by adjusting the bi‐layer thickness and the number of the bi‐layers. Type II optical hyperbolic dispersion can be obtained from high layer thickness structure (e.g., 20 nm), while it can be transformed into Type I optical hyperbolic dispersion by reducing the thickness to a proper value (e.g., 4 nm). This new nanoscale hybrid metamaterial structure with the three‐phase VAN design shows great potential for tailorable optical components in future integrated devices.
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High Performance Multiwall Carbon Nanotube–Insulator–Metal Tunnel Diode Arrays for Optical Rectification
Abstract This work reports important fundamental advancements in multiwall carbon nanotube (MWCNT) rectenna devices by creating and optimizing new diode structures to allow optical rectification with air‐stable devices. The incorporation of double‐insulator layer tunnel diodes, fabricated for the first time on MWCNT arrays, enables the use of air‐stable top metals (Al and Ag) with excellent asymmetry for rectification applications. Asymmetry is increased by as much as 10 times, demonstrating the effectiveness of incorporating multiple dielectric layers to control electron tunneling in MWCNT diode structures. MWCNT tip opening also reduces device resistance up to 75% due to an increase in diode contact area to MWCNT inner walls. This effect is consistent for different oxide materials and thicknesses. A number of insulator layers, including Al2O3, HfO2, TiO2, ZnO, and ZrO2, in both single‐ and then double‐insulator configurations are tested. Resistance increases exponentially with insulator thickness and decreases with electron affinity. These results are used to characterize double‐insulator diode performance. Finally, for the most asymmetric device structure, Al2O3‐HfO2(4/4 nm), optical rectification at a frequency of 470 THz (638 nm) is demonstrated. These results open the door for designing efficient MWCNT rectenna devices with more material flexibility, including air‐stable, transparent, and conductive top electrode materials.
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- Award ID(s):
- 1748413
- PAR ID:
- 10050254
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- Advanced Electronic Materials
- Volume:
- 4
- Issue:
- 3
- ISSN:
- 2199-160X
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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