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  • Highly effective strain-induced band-engineering of (111) oriented, direct-gap GeSn crystallized on amorphous SiO 2 layers
Title: Highly effective strain-induced band-engineering of (111) oriented, direct-gap GeSn crystallized on amorphous SiO 2 layers
Award ID(s):
1255066
PAR ID:
10051719
Author(s) / Creator(s):
 ;  
Publisher / Repository:
American Institute of Physics
Date Published:
Journal Name:
Applied Physics Letters
Volume:
108
Issue:
10
ISSN:
0003-6951
Page Range / eLocation ID:
102101
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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