Highly effective strain-induced band-engineering of (111) oriented, direct-gap GeSn crystallized on amorphous SiO 2 layers
- Award ID(s):
- 1255066
- NSF-PAR ID:
- 10051719
- Publisher / Repository:
- American Institute of Physics
- Date Published:
- Journal Name:
- Applied Physics Letters
- Volume:
- 108
- Issue:
- 10
- ISSN:
- 0003-6951
- Page Range / eLocation ID:
- 102101
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation