Harris, Joshua S., Baker, Jonathon N., Gaddy, Benjamin E., Bryan, Isaac, Bryan, Zachary, Mirrielees, Kelsey J., Reddy, Pramod, Collazo, Ramón, Sitar, Zlatko, and Irving, Douglas L. On compensation in Si-doped AlN. Applied Physics Letters 112.15 Web. doi:10.1063/1.5022794.

Harris, Joshua S., Baker, Jonathon N., Gaddy, Benjamin E., Bryan, Isaac, Bryan, Zachary, Mirrielees, Kelsey J., Reddy, Pramod, Collazo, Ramón, Sitar, Zlatko, & Irving, Douglas L. On compensation in Si-doped AlN. Applied Physics Letters, 112 (15). https://doi.org/10.1063/1.5022794

Harris, Joshua S., Baker, Jonathon N., Gaddy, Benjamin E., Bryan, Isaac, Bryan, Zachary, Mirrielees, Kelsey J., Reddy, Pramod, Collazo, Ramón, Sitar, Zlatko, and Irving, Douglas L. "On compensation in Si-doped AlN". Applied Physics Letters 112 (15). United States: American Institute of Physics. https://doi.org/10.1063/1.5022794. https://par.nsf.gov/biblio/10056197.

@article{osti_10056197,
place = {United States}, title = {On compensation in Si-doped AlN}, url = {https://par.nsf.gov/biblio/10056197}, DOI = {10.1063/1.5022794}, abstractNote = {Not Available}, journal = {Applied Physics Letters}, volume = {112}, number = {15}, publisher = {American Institute of Physics}, author = {Harris, Joshua S. and Baker, Jonathon N. and Gaddy, Benjamin E. and Bryan, Isaac and Bryan, Zachary and Mirrielees, Kelsey J. and Reddy, Pramod and Collazo, Ramón and Sitar, Zlatko and Irving, Douglas L.}, }