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Title: A Simple Model for the Thermal Noise of Saturated MOSFETs at All Inversion Levels
Award ID(s):
1525162
PAR ID:
10062393
Author(s) / Creator(s):
;
Date Published:
Journal Name:
IEEE Journal of the Electron Devices Society
Volume:
5
Issue:
6
ISSN:
2168-6734
Page Range / eLocation ID:
458 to 465
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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