Strain engineering of the silicon-vacancy center in diamond
- Award ID(s):
- 1734011
- NSF-PAR ID:
- 10072657
- Publisher / Repository:
- American Physical Society
- Date Published:
- Journal Name:
- Physical Review B
- Volume:
- 97
- Issue:
- 20
- ISSN:
- 2469-9950
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
No document suggestions found