Effects of single vacancy defects on 1/f noise in grapbene/b-BN FETs
- Award ID(s):
- 1728051
- NSF-PAR ID:
- 10076548
- Date Published:
- Journal Name:
- IEEE Device Research Conference
- Page Range / eLocation ID:
- 1 to 2
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Conference Paper:
- https://doi.org/10.1109/DRC.2018.8442196
