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Title: Understanding Behavior Trends of Big Data Frameworks in Ongoing Software-Defined Cyber-Infrastructure
As data analytics applications become increasingly important in a wide range of domains, the ability to develop large-scale and sustainable platforms and software infrastructure to support these applications has significant potential to drive research and innovation in both science and business domains. This paper characterizes performance and power-related behavior trends and tradeoffs of the two predominant frameworks for Big Data analytics (i.e., Apache Hadoop and Spark) for a range of representative applications. It also evaluates system design knobs, such as storage and network technologies and power capping techniques. Experimental results from empirical executions provide meaningful data points for exploring the potential of software-defined infrastructure for Big Data processing systems through simulation. The results provide better understanding of the design space to build multi-criteria application-centric models as well as show significant advantages of software-defined infrastructure in terms of execution time, energy and cost. It motivates further research focused on in-memory processing formulations regarding systems with deeper memory hierarchies and software-defined infrastructure.  more » « less
Award ID(s):
1464317 1305375
NSF-PAR ID:
10077381
Author(s) / Creator(s):
;
Date Published:
Journal Name:
BDCAT '17 Proceedings of the Fourth IEEE/ACM International Conference on Big Data Computing, Applications and Technologies
Page Range / eLocation ID:
199 - 208
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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    The memristor has sparked tremendous interest due to its simple two-terminal structure, including top electrode (TE), bottom electrode (BE), and an intermediate resistive switching (RS) layer. Many oxide materials, including HfO2, Ta2O5, and IGZO, have extensively been studied as an RS layer of memristors. Silicon dioxide (SiO2) features 3D structural conformity with the conventional CMOS technology and high wafer-scale homogeneity, which has benefited modern microelectronic devices as dielectric and/or passivation layers. Therefore, the use of SiO2as a memristor RS layer for neuromorphic computing is expected to be compatible with current Si technology with minimal processing and material-related complexities.

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    Acknowledgement

    This work was supported by the U.S. National Science Foundation (NSF) Award No. ECCS-1931088. S.L. and H.W.S. acknowledge the support from the Improvement of Measurement Standards and Technology for Mechanical Metrology (Grant No. 22011044) by KRISS.

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