We investigate electronic structure and dopability of an ultrawide bandgap (UWBG) AlScO3 perovskite, a known high-pressure and long-lived metastable oxide. From first-principles electronic structure calculations, HSE06(+G0W0), we find this material to exhibit an indirect bandgap of around 8.0 eV. Defect calculations point to cation and oxygen vacancies as the dominant intrinsic point defects limiting extrinsic doping. While acceptor behaving Al and Sc vacancies prevent n-type doping, oxygen vacancies permit the Fermi energy to reach ∼0.3 eV above the valence band maximum, rendering AlScO3 p-type dopable. Furthermore, we find that both Mg and Zn could serve as extrinsic p-type dopants. Specifically, Mg is predicted to have achievable net acceptor concentrations of ∼1017 cm−3 with ionization energy of bound small hole polarons of ∼0.49 eV and free ones below 0.1 eV. These values place AlScO3 among the UWBG oxides with lowest bound small hole polaron ionization energies, which, as we find, is likely due to large ionic dielectric constant that correlates well with low hole polaron ionization energies across various UWBG oxides.
Investigation of n-type doping strategies for Mg 3 Sb 2
Recent, and somewhat surprising, successful n-type doping of Mg 3 Sb 2 was the key to realizing high thermoelectric performance in this material. Herein, we use first-principles defect calculations to investigate different extrinsic n-type doping strategies for Mg 3 Sb 2 and to reveal general chemical trends in terms of dopant solubilities and maximal achievable electron concentrations. In agreement with experiments, we find that Sb substitution is an effective doping strategy, with Se and Te doping predicted to yield up to ∼8 × 10 19 cm −3 electrons. However, we also find that Mg substitution with trivalent (or higher) cations can be even more effective; in particular, the predicted highest achievable electron concentration (∼5 × 10 20 cm −3 ) with La as an extrinsic dopant exceeds that of Se and Te doping. Interstitial doping (Li, Zn, Cu, Be) is found to be largely ineffective either due to self-compensation (Li) or high formation energy (Zn, Cu, Be). Our results offer La as an alternative dopant to Te and Se and reinforce the need for careful phase boundary mapping in achieving high electron concentrations in Mg 3 Sb 2 .
more »
« less
- Award ID(s):
- 1729594
- NSF-PAR ID:
- 10079410
- Date Published:
- Journal Name:
- Journal of Materials Chemistry A
- Volume:
- 6
- Issue:
- 28
- ISSN:
- 2050-7488
- Page Range / eLocation ID:
- 13806 to 13815
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
more » « less
-
null (Ed.)Copper-antimony-sulfide compounds have desirable earth-abundant compositions for application in renewable energy technologies, such as solar energy and waste heat recycling. These compounds can be synthesized by bottom-up, solution-phase techniques that are more energy and time efficient than conventional solid-state methods. Solution-phase methods typically produce nanostructured materials, which adds another dimension to control optical, electrical, and thermal material properties. This study focuses on a modified-polyol, solution-phase synthesis for tetrahedrite (Cu 12 Sb 4 S 13 ), a promising thermoelectric material with potential also for photovoltaic applications. To dope the tetrahedrite and tune material properties, the utility of the modified polyol synthetic approach has been demonstrated as a strategy to produce phase-pure tetrahedrite that incorporates transition metal (Fe, Co, Ni, Zn, Ag) dopants for Cu, Te dopant for Sb, and Se for S. Six of these reported tetrahedrite compounds have not previously been made by solution-phase methods. For the bottom-up formation of the tetrahedrite nanomaterials, the evolution of the chemical phases has been determined by an investigation of the reaction progress as a function of temperature and time. Digenite (Cu 1.8 S), covellite (CuS), and famatinite (Cu 3 SbS 4 ) are identified as key intermediates and are consistently observed for both undoped and doped tetrahedrites. The effect of nanostructuring and doping tetrahedrite on thermal properties has been investigated. It was found that nanostructured undoped tetrahedrite has reduced thermal stability relative to samples made by solid-state methods, while the addition of dopants for Cu increased the thermal stability of the material. Crystallinity, composition, and nanostructure of products and intermediates were characterized by powder X-ray diffraction, scanning electron microscopy with energy dispersive X-ray spectroscopy, and transmission electron microscopy. Thermal properties were investigated by differential scanning calorimetry and thermal gravimetric analysis. This synthetic study with thermal property analysis demonstrates the potential of the modified polyol method to produce tetrahedrite and other copper-antimony-sulfide compounds for thermoelectric and photovoltaic applications.more » « less
-
Binary Co 4 Sb 12 skutterudite (also known as CoSb 3 ) has been extensively studied; however, its mixed-anion counterparts remain largely unexplored in terms of their phase stability and thermoelectric properties. In the search for complex anionic analogs of the binary skutterudite, we begin by investigating the Co 4 Sb 12 –Co 4 Sn 6 Te 6 pseudo-binary phase diagram. We observe no quaternary skutterudite phases and as such, focus our investigations on the ternary Co 4 Sn 6 Te 6 via experimental phase boundary mapping, transport measurements, and first-principles calculations. Phase boundary mapping using traditional bulk syntheses reveals that the Co 4 Sn 6 Te 6 exhibits electronic properties ranging from a degenerate p-type behavior to an intrinsic behavior. Under Sn-rich conditions, Hall measurements indicate degenerate p-type carrier concentrations and high hole mobility. The acceptor defect Sn Te , and donor defects Te Sn and Co i are the predominant defects and rationally correspond to regions of high Sn, Te, and Co, respectively. Consideration of the defect energetics indicates that p-type extrinsic doping is plausible; however, Sn Te is likely a killer defect that limits n-type dopability. We find that the hole carrier concentration in Co 4 Sn 6 Te 6 can be further optimized by extrinsic p-type doping under Sn-rich growth conditions.more » « less
-
Mg 3 Sb 2 –Mg 3 Bi 2 alloys have been heavily studied as a competitive alternative to the state-of-the-art n-type Bi 2 (Te,Se) 3 thermoelectric alloys. Using Mg 3 As 2 alloying, we examine another dimension of exploration in Mg 3 Sb 2 –Mg 3 Bi 2 alloys and the possibility of further improvement of thermoelectric performance was investigated. While the crystal structure of pure Mg 3 As 2 is different from Mg 3 Sb 2 and Mg 3 Bi 2 , at least 15% arsenic solubility on the anion site (Mg 3 ((Sb 0.5 Bi 0.5 ) 1−x As x ) 2 : x = 0.15) was confirmed. Density functional theory calculations showed the possibility of band convergence by alloying Mg 3 Sb 2 –Mg 3 Bi 2 with Mg 3 As 2 . Because of only a small detrimental effect on the charge carrier mobility compared to cation site substitution, the As 5% alloyed sample showed zT = 0.6–1.0 from 350 K to 600 K. This study shows that there is an even larger composition space to examine for the optimization of material properties by considering arsenic introduction into the Mg 3 Sb 2 –Mg 3 Bi 2 system.more » « less
-
null (Ed.)The Zintl phases, Yb 14 M Sb 11 ( M = Mn, Mg, Al, Zn), are now some of the highest thermoelectric efficiency p-type materials with stability above 873 K. Yb 14 MnSb 11 gained prominence as the first p-type thermoelectric material to double the efficiency of SiGe alloy, the heritage material in radioisotope thermoelectric generators used to power NASA’s deep space exploration. This study investigates the solid solution of Yb 14 Mg 1− x Al x Sb 11 (0 ≤ x ≤ 1), which enables a full mapping of the metal-to-semiconductor transition. Using a combined theoretical and experimental approach, we show that a second, high valley degeneracy ( N v = 8) band is responsible for the groundbreaking performance of Yb 14 M Sb 11 . This multiband understanding of the properties provides insight into other thermoelectric systems (La 3− x Te 4 , SnTe, Ag 9 AlSe 6 , and Eu 9 CdSb 9 ), and the model predicts that an increase in carrier concentration can lead to zT > 1.5 in Yb 14 M Sb 11 systems.more » « less
- Free Publicly Accessible Full Text
-
Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1039/c8ta03344g
