Ferroelectric Zr-doped Hafnium Oxide for Memory Applications

Ryu, Hojoon; Xu, Kai; Kim, Dongyoung; Rao, Fubo; Zhu, Wenjuan

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Citation Details

Ferroelectric Zr-doped Hafnium Oxide for Memory Applications

Award ID(s):: 1653241

PAR ID:: 10084588

Author(s) / Creator(s):: Ryu, Hojoon; Xu, Kai; Kim, Dongyoung; Rao, Fubo; Zhu, Wenjuan

Date Published:: 2018-12-01

Journal Name:: 49th IEEE Semiconductor Interface Specialists Conference

Volume:: 2018

Format(s):: Medium: X

Sponsoring Org:: National Science Foundation

Free Publicly Accessible Full Text
Accepted Manuscript1.0
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