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Title: Scanning ultrafast electron microscopy: Four-dimensional imaging of materials dynamics in space and time
Conventional electron microscopy during the last three decades has experienced tremendous developments, especially in equipment design and engineering, to become one of the most widely recognized and powerful tools for key research areas in materials science and nanotechnology. In this article, we discuss scanning ultrafast electron microscopy (S-UEM) as a new methodology for four-dimensional electron imaging of material surfaces. We also illustrate a few unique applications . By monitoring secondary electrons emitted from surfaces of photoactive materials, photo- and electron-impact-induced electrons and holes near surfaces, interfaces, and heterojunctions can be imaged with adequate spatial and temporal resolution. Charge separation, transport, and anisotropic motions as well as their dependence on carrier energies can be resolved. S-UEM is poised to directly image and visualize relevant interfacial dynamics in real space and time for emerging optoelectronic devices and help push their performance.  more » « less
Award ID(s):
1653903
NSF-PAR ID:
10086443
Author(s) / Creator(s):
; ;
Date Published:
Journal Name:
MRS Bulletin
Volume:
43
Issue:
7
ISSN:
0883-7694
Page Range / eLocation ID:
491 to 496
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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    Acknowledgment

    This work was partially supported by the U.S. National Science Foundation (NSF) Award No. ECCS-1931088. S.L. and H.W.S. acknowledge the support from the Improvement of Measurement Standards and Technology for Mechanical Metrology (Grant No. 22011044) by KRISS.

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