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1. Tailoring carrier dynamics in perovskite solar cells via precise dimension and architecture control and interfacial positioning of plasmonic nanoparticles

   https://doi.org/10.1039/c9ee03937f  

   Cui, Xun ; Chen, Yihuang ; Zhang, Meng ; Harn, Yeu Wei ; Qi, Jiabin ; Gao, Likun ; Wang, Zhong Lin ; Huang, Jinsong ; Yang, Yingkui ; Lin, Zhiqun ( January 2020 , Energy & Environmental Science)

   Placing plasmonic nanoparticles (NPs) in close proximity to semiconductor nanostructures renders effective tuning of the optoelectronic properties of semiconductors through the localized surface plasmon resonance (LSPR)-induced enhancement of light absorption and/or promotion of carrier transport. Herein, we report on, for the first time, the scrutiny of carrier dynamics of perovskite solar cells (PSCs) via sandwiching monodisperse plasmonic/dielectric core/shell NPs with systematically varied dielectric shell thickness yet fixed plasmonic core diameter within an electron transport layer (ETL). Specifically, a set of Au NPs with precisely controlled dimensions ( i.e. , fixed Au core diameter and tunable SiO 2 shell thickness) and architectures (plain Au NPs and plasmonic/dielectric Au/SiO 2 core/shell NPs) are first crafted by capitalizing on the star-like block copolymer nanoreactor strategy. Subsequently, these monodisperse NPs are sandwiched between the two consecutive TiO 2 ETLs. Intriguingly, there exists a critical dielectric SiO 2 shell thickness, below which hot electrons from the Au core are readily injected to TiO 2 ( i.e. , hot electron transfer (HET)); this promotes local electron mobility in the TiO 2 ETL, leading to improved charge transport and increased short-circuit current density ( J sc ). It is also notable that the HET effect moves upmore »the Fermi level of TiO 2 , resulting in an enhanced built-in potential and open-circuit voltage ( V oc ). Taken together, the PSCs constructed by employing a sandwich-like TiO 2 /Au NPs/TiO 2 ETL exhibit both greatly enhanced J sc and V oc , delivering champion PCEs of 18.81% and 19.42% in planar and mesostructured PSCs, respectively. As such, the judicious positioning of rationally designed monodisperse plasmonic NPs in the ETL affords effective tailoring of carrier dynamics, thereby providing a unique platform for developing high-performance PSCs.« less
2. Donor polymer fluorination doubles the efficiency in non-fullerene organic photovoltaics

   https://doi.org/10.1039/c7ta07882j  

   Bauer, Nicole ; Zhang, Qianqian ; Zhu, Jingshuai ; Peng, Zhengxing ; Yan, Liang ; Zhu, Chenhui ; Ade, Harald ; Zhan, Xiaowei ; You, Wei ( January 2017 , Journal of Materials Chemistry A)

   Donor polymer fluorination has proven to be an effective method to improve the power conversion efficiency of fullerene-based polymer solar cells (PSCs). However, this fluorine effect has not been well-studied in systems containing new, non-fullerene acceptors (NFAs). Here, we investigate the impact of donor polymer fluorination in NFA-based solar cells by fabricating devices with either a fluorinated conjugated polymer (FTAZ) or its non-fluorinated counterpart (HTAZ) as the donor polymer and a small molecule NFA (ITIC) as the acceptor. We found that, similar to fullerene-based devices, fluorination leads to an increased open circuit voltage ( V oc ) from the lowered HOMO level and improved fill factor (FF) from the higher charge carrier mobility. More importantly, donor polymer fluorination in this NFA-based system also led to a large increase in short circuit current ( J sc ), which stems from the improved charge transport and extraction in the fluorinated device. This study demonstrates that fluorination is also advantageous in NFA-based PSCs and may improve performance to a higher extent than in fullerene-based PSCs. In the context of other recent reports on demonstrating higher photovoltaic device efficiencies with fluorinated materials, fluorination appears to be a valuable strategy in the design and synthesismore »of future donors and acceptors for PSCs.« less
3. Cascade synthesis and optoelectronic applications of intermediate bandgap Cu3VSe4 nanosheets

   https://doi.org/10.1038/s41598-020-78649-9  

   Liu, Mimi ; Lai, Cheng-Yu ; Zhang, Meng ; Radu, Daniela R. ( December 2020 , Scientific Reports)

   Two-dimensional (2D) ternary materials recently generated interest in optoelectronics and energy-related applications, alongside their binary counterparts. To date, only a few naturally occurring layered 2D ternary materials have been explored. The plethora of benefits owed to reduced dimensionality prompted exploration of expanding non-layered ternary chalcogenides into the 2D realm. This work presents a templating method that uses 2D transition metal dichalcogenides as initiators to be converted into the corresponding ternary chalcogenide upon addition of copper, via a solution-phase synthesis, conducted in high boiling point solvents. The process starts with preparation of VSe₂nanosheets, which are next converted into Cu₃VSe₄sulvanite nanosheets (NSs) which retain the 2D geometry while presenting an X-ray diffraction pattern identical with the one for the bulk Cu₃VSe₄. Both the scanning electron microscopy and transmission microscopy electron microscopy show the presence of quasi-2D morphology. Recent studies of the sulfur-containing sulvanite Cu₃VS₄highlight the presence of an intermediate bandgap, associated with enhanced photovoltaic (PV) performance. The Cu₃VSe₄nanosheets reported herein exhibit multiple UV–Vis absorption peaks, related to the intermediate bandgaps similar to Cu₃VS₄and Cu₃VSe₄nanocrystals. To test the potential of Cu₃VSe₄NSs as an absorber for solar photovoltaic devices, Cu₃VSe₄NSs thin-films deposited on FTO were subjected to photoelectrochemical testing, showing p-type behavior andmore »stable photocurrents of up to ~ 0.036 mA/cm². The photocurrent shows a ninefold increase in comparison to reported performance of Cu₃VSe₄nanocrystals. This proves that quasi-2D sulvanite nanosheets are amenable to thin-film deposition and could show superior PV performance in comparison to nanocrystal thin-films. The obtained electrical impedance spectroscopy signal of the Cu₃VSe₄ NSs-FTO based electrochemical cell fits an equivalent circuit with the circuit elements of solution resistance (R_s), charge-transfer resistance (R_ct), double-layer capacitance (C_dl), and Warburg impedance (W). The estimated charge transfer resistance value of 300 Ω cm²obtained from the Nyquist plot provides an insight into the rate of charge transfer on the electrode/electrolyte interface.

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4. Strategies to Enhance the Capability of Carrier Injection to the Effective Channel for Bottom-gated Amorphous Oxide Thin Films Transistors

   Liu, Mingyuan ; Kim, Hyeonghun ; Song, Han Wook ; Lee, Sunghwan ( November 2021 , Materials Research Society)

   Over the two decades, amorphous oxide semiconductors (AOSs) and their thin film transistor (TFT) channel application have been intensely explored to realize high performance, transparent and flexible displays due to their high field effect mobility (μFE=5-20 cm2/Vs), visible range optical transparency, and low temperature processability (25-300 °C).[1-2] The metastable amorphous phase is to be maintained during operation by the addition of Zn and additional third cation species (e.g., Ga, Hf, or Al) as an amorphous phase stabilizer.[3-5] To limit TFT off-state currents, a thin channel layer (10-20 nm) was employed for InZnO (IZO)-based TFTs, or third cations were added to suppress carrier generations in the TFT channel. To resolve bias stress-induced instabilities in TFT performance, approaches to employ defect passivation layers or enhance channel/dielectric interfacial compatibility were demonstrated.[6-7] Metallization contact is also a dominating factor that determines the performance of TFTs. Particularly, it has been reported that high electrical contact resistance significantly sacrifices drain bias applied to the channel, which leads to undesirable power loss during TFT operation and issues for the measurement of TFT field effect mobilities. [2, 8] However, only a few reports that suggest strategies to enhance contact behaviors are available in the literature. Furthermore, the previousmore »approaches (1) require an additional fabrication complexity due to the use of additional treatments at relatively harsh conditions such as UV, plasma, or high temperatures, and (2) may lead to adverse effects on the channel material attributed to the chemical incompatibility between dissimilar materials, and exposures to harsh environments. Therefore, a simple and easy but effective buffer strategy, which does not require any additional process complexities and not sacrifice chemical compatibility, needs to be established to mitigate the contact issues and therefore achieve high performance and low power consumption AOS TFTs. The present study aims to demonstrate an approach utilizing an interfacial buffer layer, which is compositionally homogeneous to the channel to better align work functions between channel and metallization without a significant fabrication complexity and harsh treatment conditions. Photoelectron spectroscopic measurements reveal that the conducting IZO buffer, of which the work function (Φ) is 4.37 eV, relaxes a relatively large Φ difference between channel IZO (Φ=4.81 eV) and Ti (Φ=4.2-4.3 eV) metallization. The buffer is found to lower the energy barrier for charge carriers at the source to reach the effective channel region near the dielectric. In addition, the higher carrier density of the buffer and favorable chemical compatibility with the channel (compositionally the same) further contribute to a significant reduction in specific contact resistance as much as more than 2.5 orders of magnitude. The improved contact and carrier supply performance from the source to the channel lead to an enhanced field effect mobility of up to 56.49 cm2/Vs and a threshold voltage of 1.18 V, compared to 13.41 cm2/Vs and 7.44 V of IZO TFTs without a buffer. The present work is unique in that an approach to lower the potential barrier between the source and the effective channel region (located near the channel/dielectric interface, behaving similar to a buried-channel MOSFET [9]) by introducing a contact buffer layer that enhances the field effect mobility and facilitates carrier supply from the source to the effective channel region.« less
5. Redox-active zinc thiolates for low-cost aqueous rechargeable Zn-ion batteries

   https://doi.org/10.1039/D1SC04231A  

   Tuttle, Madison R. ; Walter, Christopher ; Brackman, Emma ; Moore, Curtis E. ; Espe, Matthew ; Rasik, Chris ; Adams, Paul ; Zhang, Shiyu ( December 2021 , Chemical Science)

   Aqueous zinc-ion batteries (AZIBs) are promising candidates for large-scale electrical energy storage due to the inexpensive, safe, and non-toxic nature of zinc. One key area that requires further development is electrode materials that store Zn 2+ ions with high reversibility and fast kinetics. To determine the viability of low-cost organosulfur compounds as OEMs for AZIBs, we investigate how structural modification affects electrochemical performance in Zn-thiolate complexes 1 and 2. Remarkably, modification of one thiolate in 1 to sulfide in 2 reduces the voltage hysteresis from 1.04 V to 0.15 V. While 1 exhibits negligible specific capacity due to the formation of insulating DMcT polymers, 2 delivers a capacity of 107 mA h g −1 with a primary discharge plateau at 1.1 V vs. Zn 2+ /Zn. Spectroscopic studies of 2 suggest a Zn 2+ and H + co-insertion mechanism with Zn 2+ as the predominant charge carrier. Capacity fading in Zn-2 cells likely results from the formation of (i) soluble H + insertion products and (ii) non-redox-active side products. Increasing electrolyte concentration and using a Nafion membrane significantly enhances the stability of 2 by suppressing H + insertion. Our findings provide insight into the molecular design strategies to reduce themore »polarization potential and improve the cycling stability of the thiolate/disulfide redox couple in aqueous battery systems.« less