Self-Limited and Forming-Free CBRAM Device With Double Al 2 O 3 ALD Layers
- Award ID(s):
- 1708700
- NSF-PAR ID:
- 10090466
- Date Published:
- Journal Name:
- IEEE Electron Device Letters
- Volume:
- 39
- Issue:
- 10
- ISSN:
- 0741-3106
- Page Range / eLocation ID:
- 1512 to 1515
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation