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Title: Self-Limited and Forming-Free CBRAM Device With Double Al 2 O 3 ALD Layers
Award ID(s):
1708700
NSF-PAR ID:
10090466
Author(s) / Creator(s):
; ;
Date Published:
Journal Name:
IEEE Electron Device Letters
Volume:
39
Issue:
10
ISSN:
0741-3106
Page Range / eLocation ID:
1512 to 1515
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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