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1. MOCVD growth of β-phase (Al _x Ga _1−x ) ₂ O ₃ on ( 2 ¯01) β-Ga ₂ O ₃ substrates

   https://doi.org/10.1063/5.0025478  

   Bhuiyan, A F; Feng, Zixuan; Johnson, Jared M.; Huang, Hsien-Lien; Hwang, Jinwoo; Zhao, Hongping (October 2020, Applied Physics Letters)

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2. β-V ₂ O ₅ as Magnesium Intercalation Cathode

   https://doi.org/10.1021/acsaem.2c02371  

   Trócoli, Rafael; Parajuli, Prakash; Frontera, Carlos; Black, Ashley P.; Alexander, Grant C. B.; Roy, Indrani; Arroyo-de Dompablo, M. Elena; Klie, Robert F.; Cabana, Jordi; Palacín, M. Rosa (October 2022, ACS Applied Energy Materials)
3. Metalorganic chemical vapor deposition of β-(Al _x Ga _1−x ) ₂ O ₃ thin films on (001) β-Ga ₂ O ₃ substrates

   https://doi.org/10.1063/5.0142746  

   Uddin Bhuiyan, A F; Meng, Lingyu; Huang, Hsien-Lien; Sarker, Jith; Chae, Chris; Mazumder, Baishakhi; Hwang, Jinwoo; Zhao, Hongping (April 2023, APL Materials)

   Phase pure β-(Al x Ga 1−x ) 2 O 3 thin films are grown on (001) oriented β-Ga 2 O 3 substrates via metalorganic chemical vapor deposition. By systematically tuning the precursor molar flow rates, the epitaxial growth of coherently strained β-(Al x Ga 1−x ) 2 O 3 films is demonstrated with up to 25% Al compositions as evaluated by high resolution x-ray diffraction. The asymmetrical reciprocal space mapping confirms the growth of coherent β-(Al x Ga 1−x ) 2 O 3 films (x < 25%) on (001) β-Ga 2 O 3 substrates. However, the alloy inhomogeneity with local segregation of Al along the ([Formula: see text]) plane is observed from atomic resolution STEM imaging, resulting in wavy and inhomogeneous interfaces in the β-(Al x Ga 1−x ) 2 O 3 /β-Ga 2 O 3 superlattice structure. Room temperature Raman spectra of β-(Al x Ga 1−x ) 2 O 3 films show similar characteristics peaks as the (001) β-Ga 2 O 3 substrate without obvious Raman shifts for films with different Al compositions. Atom probe tomography was used to investigate the atomic level structural chemistry with increasing Al content in the β-(Al x Ga 1−x ) 2 O 3 films. A monotonous increase in chemical heterogeneity is observed from the in-plane Al/Ga distributions, which was further confirmed via statistical frequency distribution analysis. Although the films exhibit alloy fluctuations, n-type doping demonstrates good electrical properties for films with various Al compositions. The determined valence and conduction band offsets at β-(Al x Ga 1−x ) 2 O 3 /β-Ga 2 O 3 heterojunctions using x-ray photoelectron spectroscopy reveal the formation of type-II (staggered) band alignment. 

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4. Determination of the β to γ Phase Transformation Mechanism in Sc- and Al-Alloyed β-Ga ₂ O ₃ Crystals

   https://doi.org/10.1021/acsaelm.4c00762  

   Balog, Andrew R; Lee, Channyung; Duarte-Ruiz, Daniel; Gayathri_Ayyagari, Sai Venkata; Jesenovec, Jani; Chmielewski, Adrian E; Miao, Leixin; Dutton, Benjamin L; McCloy, John; Cocchi, Caterina; et al (September 2024, ACS Applied Electronic Materials)
5. Band offsets at metalorganic chemical vapor deposited β-(Al _x Ga _1−x ) ₂ O ₃ /β-Ga ₂ O ₃ interfaces—Crystalline orientation dependence

   https://doi.org/10.1116/6.0001260  

   Bhuiyan, A F; Feng, Zixuan; Huang, Hsien-Lien; Meng, Lingyu; Hwang, Jinwoo; Zhao, Hongping (December 2021, Journal of Vacuum Science & Technology A)