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Title: Spin polarization through Intersystem Crossing in the silicon vacancy of silicon carbide
Silicon carbide (SiC)-based defects are promising for quantum communications, quantum information processing, and for the next generation of quantum sensors, as they feature long coherence times, frequencies near the telecom, and optical and microwave transitions. For such applications, the efficient initialization of the spin state is necessary. We develop a theoretical description of the spin-polarization process by using the intersystem crossing of the silicon vacancy defect, which is enabled by a combination of optical driving, spin-orbit coupling, and interaction with vibrational modes. By using distinct optical drives, we analyze two spin-polarization channels. Interestingly, we find that different spin projections of the ground state manifold can be polarized. This paper helps in understanding initialization and readout of the silicon vacancy and explains some existing experiments with the silicon vacancy center in SiC.  more » « less
Award ID(s):
1737921
PAR ID:
10097793
Author(s) / Creator(s):
; ;
Date Published:
Journal Name:
Physical review. B, Condensed matter
Volume:
99
ISSN:
1095-3795
Page Range / eLocation ID:
184102
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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