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Title: GaN Heteroepitaxy on Strain-Engineered (111) Si/Si1−xGex
Award ID(s):
1808900
PAR ID:
10098185
Author(s) / Creator(s):
; ; ;
Date Published:
Journal Name:
Journal of Electronic Materials
Volume:
48
Issue:
5
ISSN:
0361-5235
Page Range / eLocation ID:
3355 to 3362
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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