Valence transition model of the pseudogap, charge order, and superconductivity in electron-doped and hole-doped copper oxides
We present a valence transition model for electron- and hole-doped cuprates, within which there occurs a discrete jump in ionicity Cu2+ -> Cu1+ in both families upon doping, at or near optimal doping in the conventionally prepared electron-doped compounds and at the pseudogap phase transition in the hole-doped materials. In thin films of the T' compounds, the valence transition has occurred already in the undoped state. The phenomenology of the valence transition is closely related to that of the neutral-to-ionic transition in mixed-stack organic charge-transfer solids. Doped cuprates have negative charge-transfer gaps, just as rare-earth nickelates and BaBiO3. The unusually high ionization energy of the closed shell Cu1+ ion, taken together with the dopingdriven reduction in three-dimensional Madelung energy and gain in two-dimensional delocalization energy in the negative charge transfer gap state drives the transition in the cuprates. The combined effects of strong correlations and small d-p electron hoppings ensure that the systems behave as effective 1/2-filled Cu band with the closed shell electronically inactive O2- ions in the undoped state, and as correlated two-dimensional geometrically frustrated 1/4-filled oxygen hole band, now with electronically inactive closed-shell Cu1+ ions, in the doped state. The model thus gives microscopic justification for the more »
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Publication Date:
NSF-PAR ID:
10098347
Journal Name:
Physical review. B, Condensed matter
Volume:
98
Page Range or eLocation-ID:
205153
ISSN:
1095-3795
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