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Title: Positive Bias Instability in ZnO TFTs with Al 2 O 3 Gate Dielectric
Award ID(s):
1653343
PAR ID:
10098865
Author(s) / Creator(s):
; ; ;
Date Published:
Journal Name:
2019 IEEE International Reliability Physics Symposium (IRPS)
Page Range / eLocation ID:
1 to 5
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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