Contact Engineering for Dual-Gate MoS2 Transistors with O2 Plasma Exposure (Conference Paper) | NSF PAGES

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Citation Details

Contact Engineering for Dual-Gate MoS2 Transistors with O2 Plasma Exposure

Award ID(s):: 1653343

NSF-PAR ID:: 10098867

Author(s) / Creator(s):: Bolshakov, P.; Smyth, C. M.; Khosravi, A.; Zhao, P.; Azcatl, A.; Mirabelli, G.; Hurley, P. K.; Hinkle, C. L.; Wallace, R. M.; and Young, C. D.

Date Published:: 2018-12-05

Journal Name:: IEEE Semiconductor Interface Specialist Conference (SISC)

Format(s):: Medium: X

Sponsoring Org:: National Science Foundation

Free Publicly Accessible Full Text
Accepted Manuscript1.0
Conference Paper:
The DOI is not currently available.