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Title: Contact Engineering for Dual-Gate MoS2 Transistors with O2 Plasma Exposure
Award ID(s):
1653343
PAR ID:
10098867
Author(s) / Creator(s):
; ; ; ; ; ; ; ; ;
Date Published:
Journal Name:
IEEE Semiconductor Interface Specialist Conference (SISC)
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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