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1. Anion Exchange Doping: Tuning Equilibrium to Increase Doping Efficiency in Semiconducting Polymers

   https://doi.org/10.1021/acs.jpclett.0c03620  

   Murrey, Tucker L.; Riley, Margaret A.; Gonel, Goktug; Antonio, Dexter D.; Filardi, Leah; Shevchenko, Nikolay; Mascal, Mark; Moulé, Adam J. (February 2021, The Journal of Physical Chemistry Letters)

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2. Beyond 100% doping efficiency

   https://doi.org/10.1038/s41563-018-0266-3  

   Lüssem, Björn (February 2019, Nature Materials)
3. Doping limitations of cubic boron nitride: Effects of unintentional defects on shallow doping

   https://doi.org/10.1103/PhysRevB.105.054101  

   Joshi, Tamanna; Kumar, Pankaj; Poudyal, Bipul; Russell, Sean Paul; Manchanda, Priyanka; Dev, Pratibha (February 2022, Physical Review B)
4. Photocatalytic doping of organic semiconductors

   https://doi.org/10.1038/s41586-024-07400-5  

   Jin, Wenlong; Yang, Chi-Yuan; Pau, Riccardo; Wang, Qingqing; Tekelenburg, Eelco K; Wu, Han-Yan; Wu, Ziang; Jeong, Sang Young; Pitzalis, Federico; Liu, Tiefeng; et al (June 2024, Nature)

   Abstract Chemical doping is an important approach to manipulating charge-carrier concentration and transport in organic semiconductors (OSCs)^1–3and ultimately enhances device performance^4–7. However, conventional doping strategies often rely on the use of highly reactive (strong) dopants^8–10, which are consumed during the doping process. Achieving efficient doping with weak and/or widely accessible dopants under mild conditions remains a considerable challenge. Here, we report a previously undescribed concept for the photocatalytic doping of OSCs that uses air as a weak oxidant (p-dopant) and operates at room temperature. This is a general approach that can be applied to various OSCs and photocatalysts, yielding electrical conductivities that exceed 3,000 S cm^–1. We also demonstrate the successful photocatalytic reduction (n-doping) and simultaneous p-doping and n-doping of OSCs in which the organic salt used to maintain charge neutrality is the only chemical consumed. Our photocatalytic doping method offers great potential for advancing OSC doping and developing next-generation organic electronic devices. 

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5. Organic Doping at Ultralow Concentrations

   https://doi.org/10.1002/adom.202100089  

   Radha_Krishnan, Raj_Kishen; Liu, Shiyi; Dahal, Drona; Paudel, Pushpa_Raj; Lüssem, Björn (April 2021, Advanced Optical Materials)

   Abstract Organic doping is widely used for defining the majority charge carriers of organic thin films, tuning the Fermi level, and improving and stabilizing the performance of organic light‐emitting diodes and organic solar cells. However, in contrast to inorganic semiconductors, the doping concentrations commonly used are quite high (in the wt% range). Such high concentrations not only limit the scope of doping in organic field‐effect transistors (OFETs), but also limit the doping process itself resulting in a low doping efficiency. Here, the mechanism of doping at ultralow doping concentrations is studied. Doped C₆₀metal‐oxide‐semiconductor (MOS) junctions are used to study doping at the 100 ppm level. With the help of a small‐signal drift‐diffusion model, it is possible to disentangle effects of traps at the gate dielectric/organic semiconductor interface from effects of doping and to determine the doping efficiency and activation energy of the doping process. Doped C₆₀OFETs with an ultralow operation voltage of 800 mV and an excellent on/off ratio of up to 10⁷are realized. The devices have low subthreshold swing in the range of 80 mV dec⁻¹and a large transconductance of up to 8 mS mm⁻¹. 

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