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1. Photocatalytic doping of organic semiconductors

   https://doi.org/10.1038/s41586-024-07400-5  

   Jin, Wenlong; Yang, Chi-Yuan; Pau, Riccardo; Wang, Qingqing; Tekelenburg, Eelco K; Wu, Han-Yan; Wu, Ziang; Jeong, Sang Young; Pitzalis, Federico; Liu, Tiefeng; et al (June 2024, Nature)

   Abstract Chemical doping is an important approach to manipulating charge-carrier concentration and transport in organic semiconductors (OSCs)^1–3and ultimately enhances device performance^4–7. However, conventional doping strategies often rely on the use of highly reactive (strong) dopants^8–10, which are consumed during the doping process. Achieving efficient doping with weak and/or widely accessible dopants under mild conditions remains a considerable challenge. Here, we report a previously undescribed concept for the photocatalytic doping of OSCs that uses air as a weak oxidant (p-dopant) and operates at room temperature. This is a general approach that can be applied to various OSCs and photocatalysts, yielding electrical conductivities that exceed 3,000 S cm^–1. We also demonstrate the successful photocatalytic reduction (n-doping) and simultaneous p-doping and n-doping of OSCs in which the organic salt used to maintain charge neutrality is the only chemical consumed. Our photocatalytic doping method offers great potential for advancing OSC doping and developing next-generation organic electronic devices. 

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2. Defect chemistry and doping of BiCuSeO

   https://doi.org/10.1039/D1TA05112A  

   Toriyama, Michael Y.; Qu, Jiaxing; Snyder, G. Jeffrey; Gorai, Prashun (September 2021, Journal of Materials Chemistry A)

   While p-type BiCuSeO is a well-known mid-temperature oxide thermoelectric (TE) material, computations predict that superior TE performance can be realized through n-type doping. In this study, we use first-principles defect calculations to show that Cu vacancies are responsible for the native p-type self doping; yet, we find that BiCuSeO is n-type dopable under Cu-rich growth conditions, where the formation of Cu vacancies is suppressed. We computationally survey a broad suite of 23 dopants and find that only Cl and Br are effective n-type dopants. Therefore, we recommend that future experimental doping efforts utilize phase boundary mapping to optimize the electron concentration and resolve the anomalous p–n–p transitions observed in halogen-doped BiCuSeO. The prospect of n-type doping, as revealed by our defect calculations, paves the path for rational design of BiCuSeO chemical analogues with similar doping behavior and even better TE performance. 

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3. Remote Doping of Scalable Nanowire Branches

   https://doi.org/10.1021/acs.nanolett.0c00517  

   Friedl, Martin; Cerveny, Kris; Huang, Chunyi; Dede, Didem; Samani, Mohammad; Hill, Megan O.; Morgan, Nicholas; Kim, Wonjong; Güniat, Lucas; Segura-Ruiz, Jaime; et al (May 2020, Nano Letters)
4. Systematic Doping of SC-LDPC Codes

   https://doi.org/10.1109/isit50566.2022.9834590  

   Zhu, Min; Mitchell, David G.; Lentmaier, Michael; Costello, Daniel J. (June 2022, 2022 IEEE International Symposium on Information Theory (ISIT))

   In this paper, we examine variable node (VN) doping to mitigate the error propagation problem in sliding window decoding (SWD) of spatially coupled LDPC (SC-LDPC) codes from the point of view of the encoding process. More specifically, in order to simplify the process of generating an encoded sequence with some number of doped code bits, we propose to employ systematic encoding and to limit doping to systematic bits only. Numerical results show that doping of systematic bits only achieves comparable performance to employing general (nonsystematic) encoding and full doping of all the code bits at each doping position, while benefiting from a much simpler encoding process. We then show that the inherent rate loss due to doping can be reduced by doping only a fraction of the variable nodes at each doping position with only a minor impact on performance. 

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5. Anion Exchange Doping: Tuning Equilibrium to Increase Doping Efficiency in Semiconducting Polymers

   https://doi.org/10.1021/acs.jpclett.0c03620  

   Murrey, Tucker L.; Riley, Margaret A.; Gonel, Goktug; Antonio, Dexter D.; Filardi, Leah; Shevchenko, Nikolay; Mascal, Mark; Moulé, Adam J. (February 2021, The Journal of Physical Chemistry Letters)

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