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1. Anion Exchange Doping: Tuning Equilibrium to Increase Doping Efficiency in Semiconducting Polymers

   https://doi.org/10.1021/acs.jpclett.0c03620  

   Murrey, Tucker L. ; Riley, Margaret A. ; Gonel, Goktug ; Antonio, Dexter D. ; Filardi, Leah ; Shevchenko, Nikolay ; Mascal, Mark ; Moulé, Adam J. ( February 2021 , The Journal of Physical Chemistry Letters)

   null (Ed.)
2. Effect of Mg-doping and Fe-doping in lead zirconate titanate (PZT) thin films on electrical reliability

   https://doi.org/10.1063/5.0101308  

   Koh, Dongjoo ; Ko, Song Won ; Yang, Jung In ; Akkopru-Akgun, Betul ; Trolier-McKinstry, Susan ( November 2022 , Journal of Applied Physics)

   Uniformly acceptor doped Pb(Zr 0.48 Ti 0.52 )O 3 (PZT) films with 2 mol. % Mg or Fe prepared by chemical solution deposition exhibited decreased dielectric constants and remanent polarizations relative to undoped PZT. For highly accelerated lifetime testing (HALT) at 200 °C and an electric field of 300 kV/cm in the field up direction, the HALT lifetimes (t 50 ) for undoped, Mg-doped, and Fe-doped PZT films were shortened from 2.81 ± 0.1 to 0.21 ± 0.1 and 0.54 ± 0.04 h, respectively. Through thermally stimulated depolarization current measurement, significant [Formula: see text] electromigration was found in homogeneously Mg-doped PZT thin films, a major factor in their short HALT lifetime. Because the concentration of oxygen vacancies increases with uniform acceptor doping, the lifetime decreases. In contrast, when a thin layer of Mg-doped or Fe-doped PZT was deposited on undoped PZT or Nb-doped PZT (PNZT), the HALT lifetimes were longer than those of pure PZT or PNZT films. This confirms prior work on PNZT films with a Mn-doped top layer, demonstrating that the HALT lifetime increases for composite films when a layer with multivalent acceptors is present near the negative electrode during HALT. In that case, the compensating electrons are trapped, presumably on the multivalent acceptors, thus increasing the lifetime. 

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3. Nitrogen-Doped Graphene on Copper: Edge-Guided Doping Process and Doping-Induced Variation of Local Work Function

   https://doi.org/10.1021/acs.jpcc.8b11261  

   Neilson, Joshua ; Chinkezian, Harutiun ; Phirke, Himanshu ; Osei-Twumasi, Alexander ; Li, Yanbang ; Chichiri, Carlos ; Cho, Jongweon ; Palotás, Krisztián ; Gan, Liangbing ; Garrett, Simon J. ; et al ( March 2019 , The Journal of Physical Chemistry C)
4. Selective phosphorus doping of polycrystalline silicon on glass using self-assembled monolayer doping (MLD) and flash anneal

   https://doi.org/https://doi.org/10.1016/j.matlet.2021.130780  

   Glenn Packard ; Carolyn Spaulding ; Alex Taylor ; Karl Hirschman ; Scott Williams, Santosh Kurinec ( August 2021 , Materials letters)

   Aldo R. Boccaccini (Ed.)

   We report doping of thin (~60 nm) amorphous silicon (a-Si) on glass substrate to form n + polycrystalline silicon on glass in selective regions using Monolayer doping (MLD) via Flash Lamp Annealing (FLA). The phosphorus monolayer was formed on the exposed regions of SiO2 patterned a-Si, through functionalization with chemically bound Diethyl vinylphosphonate (DVP) dopant molecules. The samples were capped with SiO2 and annealed using a single xenon flash pulse (5.0 J/cm2, 250 μs) to simultaneously crystallize a-Si, incorporate and activate phosphorus dopants. SIMS results show an average concentration of 8x1019 cm−3 in the 60 nm of thin silicon on glass. Electrical results show a resistivity of ~6.60x10−2 Ω.cm in doped regions. N-channel field effect transistor devices are successfully demonstrated using this MLD-FLA technique. 

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5. The role of Mg bulk hyper-doping and delta-doping in low-resistance GaN homojunction tunnel diodes with negative differential resistance

   https://doi.org/10.1063/1.5112498  

   Vadiee, Ehsan ; Clinton, Evan A. ; Carpenter, Joe V. ; McFavilen, Heather ; Arena, Chantal ; Holman, Zachary C. ; Honsberg, Christiana B. ; Doolittle, W. Alan ( August 2019 , Journal of Applied Physics)