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Mg 3 Sb 2 –Mg 3 Bi 2 alloys have been heavily studied as a competitive alternative to the state-of-the-art n-type Bi 2 (Te,Se) 3 thermoelectric alloys. Using Mg 3 As 2 alloying, we examine another dimension of exploration in Mg 3 Sb 2 –Mg 3 Bi 2 alloys and the possibility of further improvement of thermoelectric performance was investigated. While the crystal structure of pure Mg 3 As 2 is different from Mg 3 Sb 2 and Mg 3 Bi 2 , at least 15% arsenic solubility on the anion site (Mg 3 ((Sb 0.5 Bi 0.5 ) 1−x As x ) 2 : x = 0.15) was confirmed. Density functional theory calculations showed the possibility of band convergence by alloying Mg 3 Sb 2 –Mg 3 Bi 2 with Mg 3 As 2 . Because of only a small detrimental effect on the charge carrier mobility compared to cation site substitution, the As 5% alloyed sample showed zT = 0.6–1.0 from 350 K to 600 K. This study shows that there is an even larger composition space to examine for the optimization of material properties by considering arsenic introduction into the Mg 3 Sb 2 –Mg 3 Bi 2 system.
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Mg Deficiency in Grain Boundaries of n‐Type Mg 3 Sb 2 Identified by Atom Probe Tomography
Abstract Highly resistive grain boundaries significantly reduce the electrical conductivity that compromises the thermoelectric figure‐of‐meritzTin n‐type polycrystalline Mg3Sb2. In this work, discovered is a Mg deficiency near grain boundaries using atom‐probe tomography. Approximately 5 at% of Mg deficiency is observed uniformly in a 10 nm region along the grain boundary without any evidence of a stable secondary or impurity phase. The off‐stoichiometry can prevent n‐type dopants from providing electrons, lowering the local carrier concentration near the grain boundary and thus the local conductivity. This observation explains how nanometer scale compositional variations can dramatically determine thermoelectriczT, and provides concrete strategies to reduce grain‐boundary resistance and increasezTin Mg3Sb2‐based materials.
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- PAR ID:
- 10102081
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- Advanced Materials Interfaces
- Volume:
- 6
- Issue:
- 13
- ISSN:
- 2196-7350
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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