Vadiee, Ehsan, Clinton, Evan A., McFavilen, Heather, Weidenbach, Alex S., Engel, Zachary, Matthews, Christopher, Zhang, Chaomin, Arena, Chantal, King, Richard R., Honsberg, Christiana B., and Doolittle, W. Alan. InGaN solar cells with regrown GaN homojunction tunnel contacts. Retrieved from https://par.nsf.gov/biblio/10104759. Applied Physics Express 11.8 Web. doi:10.7567/APEX.11.082304.

Vadiee, Ehsan, Clinton, Evan A., McFavilen, Heather, Weidenbach, Alex S., Engel, Zachary, Matthews, Christopher, Zhang, Chaomin, Arena, Chantal, King, Richard R., Honsberg, Christiana B., & Doolittle, W. Alan. InGaN solar cells with regrown GaN homojunction tunnel contacts. Applied Physics Express, 11 (8). Retrieved from https://par.nsf.gov/biblio/10104759. https://doi.org/10.7567/APEX.11.082304

Vadiee, Ehsan, Clinton, Evan A., McFavilen, Heather, Weidenbach, Alex S., Engel, Zachary, Matthews, Christopher, Zhang, Chaomin, Arena, Chantal, King, Richard R., Honsberg, Christiana B., and Doolittle, W. Alan. "InGaN solar cells with regrown GaN homojunction tunnel contacts". Applied Physics Express 11 (8). Country unknown/Code not available. https://doi.org/10.7567/APEX.11.082304. https://par.nsf.gov/biblio/10104759.

@article{osti_10104759,
place = {Country unknown/Code not available}, title = {InGaN solar cells with regrown GaN homojunction tunnel contacts}, url = {https://par.nsf.gov/biblio/10104759}, DOI = {10.7567/APEX.11.082304}, abstractNote = {}, journal = {Applied Physics Express}, volume = {11}, number = {8}, author = {Vadiee, Ehsan and Clinton, Evan A. and McFavilen, Heather and Weidenbach, Alex S. and Engel, Zachary and Matthews, Christopher and Zhang, Chaomin and Arena, Chantal and King, Richard R. and Honsberg, Christiana B. and Doolittle, W. Alan}, }