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GeSn films were simultaneously deposited on Si (100), Si (111), c-plane sapphire (Al2O3), and fused silica substrates to investigate the impact of the substrate on the resulting GeSn film. The electronic, structural, and optical properties of these films were characterized by temperature-dependent Hall-effect measurements, x-ray diffractometry, secondary ion mass spectrometry, and variable angle spectroscopic ellipsometry. All films were polycrystalline with varying degrees of texturing. The film on Si (100) contained only GeSn (100) grains, 40.4 nm in diameter. The film deposited on Si (111) contained primarily GeSn (111) grains, 36.4 nm in diameter. Both films deposited on silicon substrates were fully relaxed. The layer deposited on Al2O3 contained primarily GeSn (111) grains, 41.3 nm in diameter. The film deposited on fused silica was not textured, and the average grain size was 35.0 nm. All films contained ∼5.6 at. % Sn throughout the layer, except for the film deposited on Al2O3, which contained 7.5% Sn. The films deposited on Si (111), Al2O3, and fused silica exhibit p-type conduction over the entire temperature range, 10–325 K, while the layer deposited on the Si (100) substrate shows a mixed conduction transition from p-type at low temperature to n-type above 220 K. From ∼175 to 260 K, both holes and electrons contribute to conduction. Texturing of the GeSn film on Si (100) was the only characteristic that set this film apart from the other three films, suggesting that something related to GeSn (100) crystal orientation causes this transition from p- to n-type conduction.
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Glancing Angle Deposited CdTe: Optical Properties and Structure
Optical and microstructural properties of as-deposited CdTe films deposited on soda lime glass by magnetron sputtering at various source flux angles have been investigated using GIXRD, SEM, unpolarized transmittance / reflectance, and spectroscopic ellipsometry. Influence of deposition angle on resultant crystalline grain size and orientation are tracked for these films. All CdTe films studied are found to have cubic crystal structure and (111) preferential grain orientation. Films deposited at 0° and 45° are almost entirely (111) oriented, whereas films deposited at higher angles exhibit a wider variety of competing grain orientations, suggesting that deposition angle can be used as an effective parameter towards controlling grain orientation. With increasing numbers of grain orientations, grain size is found to decrease. Ex-situ spectroscopic ellipsometry is used to obtain the structural and optical properties. Stress induced in the film is calculated based on shifts of critical point energies.
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- Award ID(s):
- 1711534
- PAR ID:
- 10105354
- Date Published:
- Journal Name:
- 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)
- Page Range / eLocation ID:
- 3227 to 3230
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Conference Paper:
- https://doi.org/10.1109/PVSC.2018.8547890
