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Title: Electronic Structure of Tungsten-Doped β -Ga 2 O 3 Compounds
Award ID(s):
1827745
PAR ID:
10106066
Author(s) / Creator(s):
; ; ; ;
Date Published:
Journal Name:
ECS Journal of Solid State Science and Technology
Volume:
8
Issue:
7
ISSN:
2162-8769
Page Range / eLocation ID:
Q3111 to Q3115
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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