skip to main content
US FlagAn official website of the United States government
dot gov icon
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
https lock icon
Secure .gov websites use HTTPS
A lock ( lock ) or https:// means you've safely connected to the .gov website. Share sensitive information only on official, secure websites.


Title: CVD Growth of Monolayer MoS2 on Sapphire Substrates by using MoO3 Thin Films as a Precursor for Co-Evaporation
ABSTRACT Scalable synthesis of two-dimensional molybdenum disulfide (MoS 2 ) via chemical vapor deposition (CVD) is of considerable interests for many applications in electronics and optoelectronics. Here, we investigate the CVD growth of MoS 2 single crystals on sapphire substrates by using thermally evaporated molybdenum trioxide (MoO 3 ) thin films as molybdenum (Mo) source instead of conventionally used MoO 3 powder for co-evaporation synthesis. The MoO 3 thin film source provides uniform Mo vapor pressure in the growth chamber resulting in clean and reproducible MoS 2 triangles without any oxide or oxysulfide species. Scanning electron microscopy, Raman spectroscopy, photoluminescence spectroscopy and atomic force microscopy characterization were performed to characterize the growth results. Very high photoluminescence (PL) response was observed at 1.85 eV which is a good implication of high optical quality of these crystals directly grown on sapphire substrate.  more » « less
Award ID(s):
1728309
PAR ID:
10107189
Author(s) / Creator(s):
;
Date Published:
Journal Name:
MRS Advances
Volume:
4
Issue:
10
ISSN:
2059-8521
Page Range / eLocation ID:
587 to 592
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
More Like this
  1. ABSTRACT Chemical vapor deposition (CVD) growth of two-dimensional molybdenum disulfide (MoS 2 ) using molybdenum trioxide (MoO 3 ) and sulfur (S) powder often results in intermediate molybdenum oxy-sulfide (MoOS 2 ) species along with MoS 2 due to a lack of control over the vapor pressure required for the clean growth. Much effort has been devoted in understanding and controlling of these intermediate MoOS 2 specifies. Here, we show that with a second step sulfurization at moderate temperatures, these MoOS 2 crystals can be transformed to monolayer MoS 2 crystals. Scanning electron microscopy, Raman and photoluminescence spectroscopy and atomic force microscopy characterization carried out before and after re-sulfurization confirm the monolayer MoS 2 growth via this route. This study shows that MoOS 2 formed at the intermediate state can be successfully recycled to MoS 2 . 
    more » « less
  2. Molybdenum disulfide (MoS2) transistors are a promising alternative for the semiconductor industry due to their large on/off current ratio (>1010), immunity to short-channel effects, and unique switching characteristics. MoS2 has drawn considerable interest due to its intriguing electrical, optical, sensing, and catalytic properties. Monolayer MoS2 is a semiconducting material with a direct band gap of ~1.9 eV, which can be tuned. Commercially, the aim of synthesizing a novel material is to grow high-quality samples over a large area and at a low cost. Although chemical vapor deposition (CVD) growth techniques are associated with a low-cost pathway and large-area material growth, a drawback concerns meeting the high crystalline quality required for nanoelectronic and optoelectronic applications. This research presents a lower-temperature CVD for the repeatable synthesis of large-size mono- or few-layer MoS2 using the direct vapor phase sulfurization of MoO3. The samples grown on Si/SiO2 substrates demonstrate a uniform single-crystalline quality in Raman spectroscopy, photoluminescence (PL), scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and scanning transmission electron microscopy. These characterization techniques were targeted to confirm the uniform thickness, stoichiometry, and lattice spacing of the MoS2 layers. The MoS2 crystals were deposited over the entire surface of the sample substrate. With a detailed discussion of the CVD setup and an explanation of the process parameters that influence nucleation and growth, this work opens a new platform for the repeatable synthesis of highly crystalline mono- or few-layer MoS2 suitable for optoelectronic application. 
    more » « less
  3. Abstract The structural integrity of atomically thin two-dimensional molybdenum disulfide (MoS2) is crucial for high-temperature applications, including nanoelectronics and optoelectronics. This study explores the structural stability and electrical performance, under extended thermal exposure in air, of MoS2flakes synthesized via chemical vapor deposition (CVD) and mechanical exfoliation. The MoS2flakes, both CVD-grown and mechanically exfoliated, were subjected to heating at 200 °C with a relative humidity of 60(±5)% for a prolonged period and investigated with atomic force microscopy and Raman spectroscopy. This study shows that CVD-grown flakes developed noticeable cracks after prolonged heating, whereas mechanically exfoliated flakes mostly retained their structural integrity. Also, both types of flakes showed a decrease in layer thickness and lateral size over time, with mechanically exfoliated flakes exhibiting a comparatively smaller reduction in substrate coverage area. In addition, MoS2-based two-terminal devices were subjected to heating at 150 °C for approximately 1100 h, and their electrical characterization revealed a steady rise in current during constant voltage (5 V) conditions. This study enhances our understanding of MoS2stability and provides guidance for improving the reliability of MoS2-based devices in high-temperature electronic applications. 
    more » « less
  4. null (Ed.)
    Abstract Monolayer (ML) molybdenum disulfide (MoS₂) is a novel 2-dimensional (2D) semiconductor whose properties have many applications in devices. Despite its potential, ML MoS₂ is limited in its use due to its degradation under exposure to ambient air. Therefore, studies of possible degradation prevention methods are important. It is well established that air humidity plays a major role in the degradation. In this paper, we investigate the effects of substrate hydrophobicity on the degradation of chemical vapor deposition (CVD) grown ML MoS 2 . We use optical microscopy, atomic force microscopy (AFM), and Raman mapping to investigate the degradation of ML MoS 2 grown on SiO 2 and Si 3 N 4 that are hydrophilic and hydrophobic substrates, respectively. Our results show that the degradation of ML MoS₂ on Si 3 N 4 is significantly less than the degradation on SiO 2 . These results show that using hydrophobic substrates to grow 2D transition metal dichalcogenide ML materials may diminish ambient degradation and enable improved protocols for device manufacturing. 
    more » « less
  5. Epitaxial growth of κ-phase Ga 2 O 3 thin films is investigated on c-plane sapphire, GaN- and AlN-on-sapphire, and (100) oriented yttria stabilized zirconia (YSZ) substrates via metalorganic chemical vapor deposition. The structural and surface morphological properties are investigated by comprehensive material characterization. Phase pure κ-Ga 2 O 3 films are successfully grown on GaN-, AlN-on-sapphire, and YSZ substrates through a systematical tuning of growth parameters including the precursor molar flow rates, chamber pressure, and growth temperature, whereas the growth on c-sapphire substrates leads to a mixture of β- and κ-polymorphs of Ga 2 O 3 under the investigated growth conditions. The influence of the crystalline structure, surface morphology, and roughness of κ-Ga 2 O 3 films grown on different substrates are investigated as a function of precursor flow rate. High-resolution scanning transmission electron microscopy imaging of κ-Ga 2 O 3 films reveals abrupt interfaces between the epitaxial film and the sapphire, GaN, and YSZ substrates. The growth of single crystal orthorhombic κ-Ga 2 O 3 films is confirmed by analyzing the scanning transmission electron microscopy nanodiffraction pattern. The chemical composition, surface stoichiometry, and bandgap energies of κ-Ga 2 O 3 thin films grown on different substrates are studied by high-resolution x-ray photoelectron spectroscopy (XPS) measurements. The type-II (staggered) band alignments at three interfaces between κ-Ga 2 O 3 and c-sapphire, AlN, and YSZ substrates are determined by XPS, with an exception of κ-Ga 2 O 3 /GaN interface, which shows type-I (straddling) band alignment. 
    more » « less