Wang, Yongjie, Vanka, Srinivas, Gim, Jiseok, Wu, Yuanpeng, Fan, Ronglei, Zhang, Yazhou, Shi, Jinwen, Shen, Mingrong, Hovden, Robert, and Mi, Zetian. An In0.42Ga0.58N tunnel junction nanowire photocathode monolithically integrated on a nonplanar Si wafer. Retrieved from https://par.nsf.gov/biblio/10107336. Nano Energy 57.C Web. doi:10.1016/j.nanoen.2018.12.067.

Wang, Yongjie, Vanka, Srinivas, Gim, Jiseok, Wu, Yuanpeng, Fan, Ronglei, Zhang, Yazhou, Shi, Jinwen, Shen, Mingrong, Hovden, Robert, & Mi, Zetian. An In0.42Ga0.58N tunnel junction nanowire photocathode monolithically integrated on a nonplanar Si wafer. Nano Energy, 57 (C). Retrieved from https://par.nsf.gov/biblio/10107336. https://doi.org/10.1016/j.nanoen.2018.12.067

Wang, Yongjie, Vanka, Srinivas, Gim, Jiseok, Wu, Yuanpeng, Fan, Ronglei, Zhang, Yazhou, Shi, Jinwen, Shen, Mingrong, Hovden, Robert, and Mi, Zetian. "An In0.42Ga0.58N tunnel junction nanowire photocathode monolithically integrated on a nonplanar Si wafer". Nano Energy 57 (C). Country unknown/Code not available. https://doi.org/10.1016/j.nanoen.2018.12.067. https://par.nsf.gov/biblio/10107336.

@article{osti_10107336,
place = {Country unknown/Code not available}, title = {An In0.42Ga0.58N tunnel junction nanowire photocathode monolithically integrated on a nonplanar Si wafer}, url = {https://par.nsf.gov/biblio/10107336}, DOI = {10.1016/j.nanoen.2018.12.067}, abstractNote = {}, journal = {Nano Energy}, volume = {57}, number = {C}, author = {Wang, Yongjie and Vanka, Srinivas and Gim, Jiseok and Wu, Yuanpeng and Fan, Ronglei and Zhang, Yazhou and Shi, Jinwen and Shen, Mingrong and Hovden, Robert and Mi, Zetian}, }