Chang, A. S., Walrath, J. C., Frost, T., Greenhill, C., Occena, J., Hazari, A., Bhattacharya, P., and Goldman, R. S. Formation and properties of InGaN QDs: Influence of substrates. Retrieved from https://par.nsf.gov/biblio/10112518. Applied Physics Letters 114.6 Web. doi:10.1063/1.5053856.
Chang, A. S., Walrath, J. C., Frost, T., Greenhill, C., Occena, J., Hazari, A., Bhattacharya, P., & Goldman, R. S. Formation and properties of InGaN QDs: Influence of substrates. Applied Physics Letters, 114 (6). Retrieved from https://par.nsf.gov/biblio/10112518. https://doi.org/10.1063/1.5053856
Chang, A. S., Walrath, J. C., Frost, T., Greenhill, C., Occena, J., Hazari, A., Bhattacharya, P., and Goldman, R. S.
"Formation and properties of InGaN QDs: Influence of substrates". Applied Physics Letters 114 (6). Country unknown/Code not available. https://doi.org/10.1063/1.5053856.https://par.nsf.gov/biblio/10112518.
@article{osti_10112518,
place = {Country unknown/Code not available},
title = {Formation and properties of InGaN QDs: Influence of substrates},
url = {https://par.nsf.gov/biblio/10112518},
DOI = {10.1063/1.5053856},
abstractNote = {},
journal = {Applied Physics Letters},
volume = {114},
number = {6},
author = {Chang, A. S. and Walrath, J. C. and Frost, T. and Greenhill, C. and Occena, J. and Hazari, A. and Bhattacharya, P. and Goldman, R. S.},
}
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