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Title: Ga 2 O 3 metal-oxide-semiconductor field effect transistors on sapphire substrate by MOCVD
Award ID(s):
1748339
PAR ID:
10113009
Author(s) / Creator(s):
; ;
Date Published:
Journal Name:
Semiconductor Science and Technology
Volume:
34
Issue:
8
ISSN:
0268-1242
Page Range / eLocation ID:
08LT01
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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