Ga 2 O 3 metal-oxide-semiconductor field effect transistors on sapphire substrate by MOCVD
- Award ID(s):
- 1748339
- PAR ID:
- 10113009
- Date Published:
- Journal Name:
- Semiconductor Science and Technology
- Volume:
- 34
- Issue:
- 8
- ISSN:
- 0268-1242
- Page Range / eLocation ID:
- 08LT01
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation