skip to main content
US FlagAn official website of the United States government
dot gov icon
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
https lock icon
Secure .gov websites use HTTPS
A lock ( lock ) or https:// means you've safely connected to the .gov website. Share sensitive information only on official, secure websites.

Explore Research Products in the PAR
It may take a few hours for recently added research products to appear in PAR search results.


Title: Tunable Organic Polymer/Inorganic Silicon Diode Using an Ionic Liquid Gel Gate Dielectric
A diode is fabricated using poly(3,4‐ethylenedioxythiophene) doped with poly(styrene sulfonic acid) (PEDOT‐PSS) and n‐doped Si. Using an ionic liquid (IL) gel as the gate dielectric, the diode rectification ratio is tunable up to four orders of magnitude at very low operating voltages. Both p–n and Schottky type diodes are observed in the same device depending on the polarity of the gate voltage. IL‐gated electrostatic/electrochemical doping in PEDOT‐PSS is believed to be responsible for this switch. The turn‐on voltage in the first quadrant of the current–voltage (I–V) curve for the p–n diode is in the range 0.2–0.4 V. The Schottky diode operates in the third quadrant. This is the first report on a tunable diode using an IL to control its operation, and the low operating voltages make these diodes excellent candidates for use in reduced power consumption electronics.  more » « less
Award ID(s):
1800262
PAR ID:
10117110
Author(s) / Creator(s):
 ;  
Publisher / Repository:
Wiley Blackwell (John Wiley & Sons)
Date Published:
Journal Name:
physica status solidi (a)
Volume:
216
Issue:
20
ISSN:
1862-6300
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
More Like this
  1. ; ; ; ; ; (, Applied Physics Letters)
    Growing a thick high-quality epitaxial layer on the β-Ga2O3 substrate is crucial in commercializing β-Ga2O3 devices. Metal organic chemical vapor deposition (MOCVD) is also well-established for the large-scale commercial growth of β-Ga2O3 and related heterostructures. This paper presents a systematic study of the Schottky barrier diodes fabricated on two different Si-doped homoepitaxial β-Ga2O3 thin films grown on Sn-doped (001) and (010) β-Ga2O3 substrates by MOCVD. X-ray diffraction analysis of the MOCVD-grown sample, room temperature current density–voltage data for different Schottky diodes, and C–V measurements are presented. Diode characteristics, such as ideality factor, barrier height, specific on-resistance, and breakdown voltage, are studied. Temperature dependence (170–360 K) of the ideality factor, barrier height, and Poole–Frenkel reverse leakage mechanism are also analyzed from the J–V–T characteristics of the fabricated Schottky diodes. 
    more » « less
  2. ; ; ; ; ; (, AIP Advances)
    CVD grown MoSe2 monolayers were electrically characterized at room temperature in a field effect transistor (FET) configuration using an ionic liquid (IL) as the gate dielectric. During the growth, instead of using MoO3 powder, ammonium heptamolybdate was used for better Mo control of the source and sodium cholate added for lager MoSe2 growth areas. In addition, a high specific capacitance (∼7 μF/cm2) IL was used as the gate dielectric to significantly reduce the operating voltage. The device exhibited ambipolar charge transport at low voltages with enhanced parameters during n- and p-FET operation. IL gating thins the Schottky barrier at the metal/semiconductor interface permitting efficient charge injection into the channel and reduces the effects of contact resistance on device performance. The large specific capacitance of the IL was also responsible for a much higher induced charge density compared to the standard SiO2 dielectric. The device was successfully tested as an inverter with a gain of ∼2. Using a common metal for contacts simplifies fabrication of this ambipolar device, and the possibility of radiative recombination of holes and electrons could further extend its use in low power optoelectronic applications. 
    more » « less
  3. ; ; ; ; ; (, Applied Physics Letters)
    High crystalline quality thick β-Ga2O3drift layers are essential for multi-kV vertical power devices. Low-pressure chemical vapor deposition (LPCVD) is suitable for achieving high growth rates. This paper presents a systematic study of the Schottky barrier diodes fabricated on four different Si-doped homoepitaxial β-Ga2O3thin films grown on Sn-doped (010) and (001) β-Ga2O3substrates by LPCVD with a fast growth rate varying from 13 to 21  μm/h. A higher temperature growth results in the highest reported growth rate to date. Room temperature current density–voltage data for different Schottky diodes are presented, and diode characteristics, such as ideality factor, barrier height, specific on-resistance, and breakdown voltage are studied. Temperature dependence (25–250 °C) of the ideality factor, barrier height, and specific on-resistance is also analyzed from the J–V–T characteristics of the fabricated Schottky diodes. 
    more » « less
  4. ; ; ; ; ; ; (, Applied Physics Letters)
    In this Letter, we unveil the high-temperature limits of N-polar GaN Schottky contacts enhanced by a low-pressure chemical vapor deposited (LPCVD) SiN interlayer. Compared to conventional Schottky diodes, the insertion of a 5 nm SiN lossy dielectric interlayer in-between Ni and N-polar GaN increases the turn-on voltage ( V ON ) from 0.4 to 0.9 V and the barrier height ( ϕ B ) from 0.4 to 0.8 eV. This modification also reduces the leakage current at zero bias significantly: at room temperature, the leakage current in the conventional Schottky diode is >10 3 larger than that observed in the device with the SiN interlayer, while at 200 °C, this ratio increases to 10 5 . Thus, the rectification ratio (I ON /I OFF ) at ±1.5 V reduces to less than one at 250 °C for the conventional Schottky diode, whereas for SiN-coated diodes, rectification continues until 500 °C. The I–V characteristics of the diode with an SiN interlayer can be recovered after exposure to 400 °C or lower. Contact degradation occurs at 500 °C, although devices are not destroyed yet. Here, we report N-polar GaN Schottky contact operation up to 500 °C using an LPCVD SiN interlayer. 
    more » « less
  5. ; ; ; ; ; (, Frontiers in Bioengineering and Biotechnology)
    Boland, Thomas (Ed.)
    The conventional real-time screening in organs-on-chips is limited to optical tracking of pre-tagged cells and biological agents. This work introduces an efficient biofabrication protocol to integrate tunable hydrogel electrodes into 3D bioprinted-on-chips. We established our method of fabricating cell-laden hydrogel-based microfluidic chips through digital light processing-based 3D bioprinting. Our conductive ink includes poly-(3,4-ethylene-dioxythiophene)-polystyrene sulfonate (PEDOT: PSS) microparticles doped in polyethylene glycol diacrylate (PEGDA). We optimized the manufacturing process of PEDOT: PSS microparticles characterized our conductive ink for different 3D bioprinting parameters, geometries, and materials conditions. While the literature is limited to 0.5% w/v for PEDOT: PSS microparticle concentration, we increased their concentration to 5% w/v with superior biological responses. We measured the conductivity in the 3–15 m/m for a range of 0.5%–5% w/v microparticles, and we showed the effectiveness of 3D-printed electrodes for predicting cell responses when encapsulated in gelatin-methacryloyl (GelMA). Interestingly, a higher cellular activity was observed in the case of 5% w/v microparticles compared to 0.5% w/v microparticles. Electrochemical impedance spectroscopy measurements indicated significant differences in cell densities and spheroid sizes embedded in GelMA microtissues. 
    more » « less
  • Citation Formats
  • MLA
  • APA
  • Chicago
  • BibTeX
  • Save / Share this Record
  • Send to Email