Large area (1 mm2) vertical NiO/
Integrable, hexagonal‐cell, high‐voltage, quasivertical GaN power U‐shaped trench‐gate metal‐oxide‐semiconductor field‐effect transistors (UMOSFETs) fabricated in the n+/p/n−/n+ GaN epilayers on sapphire substrates are experimentally demonstrated for the first time. Hexagonal cells, with pitch ranging from 11 to 20 μm, are used to obtain identical
- NSF-PAR ID:
- 10123456
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- physica status solidi (a)
- Volume:
- 217
- Issue:
- 7
- ISSN:
- 1862-6300
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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