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Title: Demonstration of 4.7 kV breakdown voltage in NiO/ β -Ga 2 O 3 vertical rectifiers
Vertical heterojunction NiO/β n-Ga 2 O/n + Ga 2 O 3 rectifiers employing NiO layer extension beyond the rectifying contact for edge termination exhibit breakdown voltages (V B ) up to 4.7 kV with a power figure-of-merits, V B 2 /R ON of 2 GW·cm −2 , where R ON is the on-state resistance (11.3 mΩ cm 2 ). Conventional rectifiers fabricated on the same wafers without NiO showed V B values of 840 V and a power figure-of-merit of 0.11 GW cm −2 . Optimization of the design of the two-layer NiO doping and thickness and also the extension beyond the rectifying contact by TCAD showed that the peak electric field at the edge of the rectifying contact could be significantly reduced. The leakage current density before breakdown was 144 mA/cm 2 , the forward current density was 0.8 kA/cm 2 at 12 V, and the turn-on voltage was in the range of 2.2–2.4 V compared to 0.8 V without NiO. Transmission electron microscopy showed sharp interfaces between NiO and epitaxial Ga 2 O 3 and a small amount of disorder from the sputtering process.  more » « less
Award ID(s):
1856662
NSF-PAR ID:
10343104
Author(s) / Creator(s):
; ; ; ; ; ;
Date Published:
Journal Name:
Applied Physics Letters
Volume:
121
Issue:
4
ISSN:
0003-6951
Page Range / eLocation ID:
042105
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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