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1. High Current Density SmTiO ₃ /SrTiO ₃ Field-Effect Transistors

   https://doi.org/10.1021/acsaelm.9b00738  

   Chandrasekar, Hareesh; Ahadi, Kaveh; Razzak, Towhidur; Stemmer, Susanne; Rajan, Siddharth (January 2020, ACS Applied Electronic Materials)

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2. Thermally generated spin current in the topological insulator Bi ₂ Se ₃

   https://doi.org/10.1126/sciadv.adi4540  

   Jain, Rakshit; Stanley, Max; Bose, Arnab; Richardella, Anthony R.; Zhang, Xiyue S.; Pillsbury, Timothy; Muller, David A.; Samarth, Nitin; Ralph, Daniel C. (December 2023, Science Advances)

   We present measurements of thermally generated transverse spin currents in the topological insulator Bi₂Se₃, thereby completing measurements of interconversions among the full triad of thermal gradients, charge currents, and spin currents. We accomplish this by comparing the spin Nernst magneto-thermopower to the spin Hall magnetoresistance for bilayers of Bi₂Se₃/CoFeB. We find that Bi₂Se₃does generate substantial thermally driven spin currents. A lower bound for the ratio of spin current density to thermal gradient is $\frac{J_s}{{\mathbf{\nabla }}_{\mathit{x}}\mathit{T}}$= (4.9 ± 0.9) × 10⁶ $\left(\frac{\hslash }{2e}\right)\frac{\mathbf{A}{\mathbf{m}}^{-2}}{\mathbf{K}\text{μ}{\mathbf{m}}^{-1}}$, and a lower bound for the magnitude of the spin Nernst ratio is −0.61 ± 0.11. The spin Nernst ratio for Bi₂Se₃is the largest among all materials measured to date, two to three times larger compared to previous measurements for the heavy metals Pt and W. Strong thermally generated spin currents in Bi₂Se₃can be understood via Mott relations to be due to an overall large spin Hall conductivity and its dependence on electron energy. 

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3. Thermal Simulations of High Current β-Ga ₂ O ₃ Schottky Rectifiers

   https://doi.org/10.1149/2.0361907jss  

   Sharma, Ribhu; Patrick, Erin; Law, Mark E.; Yang, Jiancheng; Ren, F.; Pearton, S. J. (January 2019, ECS Journal of Solid State Science and Technology)
4. High Breakdown Current Density in Monolayer Nb ₄ C ₃ T _x MXene

   https://doi.org/10.1021/acsmaterialslett.1c00324  

   Lipatov, Alexey; Loes, Michael J.; Vorobeva, Nataliia S.; Bagheri, Saman; Abourahma, Jehad; Chen, Hanying; Hong, Xia; Gogotsi, Yury; Sinitskii, Alexander (August 2021, ACS Materials Letters)
5. Dynamic Switching of 1.9 A/1.76 kV Forward Current NiO/β-Ga ₂ O ₃ Rectifiers

   https://doi.org/10.1149/2162-8777/ac942c  

   Li, Jian-Sian; Chiang, Chao-Ching; Xia, Xinyi; Tsai, Cheng-Tse; Ren, Fan; Liao, Yu-Te; Pearton, S. J. (October 2022, ECS Journal of Solid State Science and Technology)

   The switching performance of unpackaged vertical geometry NiO/ β -Ga 2 O 3 rectifiers with a reverse breakdown voltage of 1.76 kV (0.1 cm diameter, 7.85 × 10 −3 cm 2 area) and an absolute forward current of 1.9 A fabricated on 20 μ m thick epitaxial β -Ga 2 O 3 drift layers and a double layer of NiO to optimize breakdown and contact resistance was measured with an inductive load test circuit. The Baliga figure-of-merit of the devices was 261 MW.cm −2 , with differential on-state resistance of 11.86 mΩ.cm 2 . The recovery characteristics for these rectifiers switching from forward current of 1 A to reverse off-state voltage of −550 V showed a measurement-parasitic-limited recovery time (t rr ) of 101 ns, with a peak current value of 1.4 A for switching from 640 V. The reverse recovery time was limited by extrinsic parasitic and thus does not represent the intrinsic device characteristics. There was no significant dependence of t rr on switching voltage or forward current. 

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