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1. High Current Density SmTiO ₃ /SrTiO ₃ Field-Effect Transistors

   https://doi.org/10.1021/acsaelm.9b00738  

   Chandrasekar, Hareesh; Ahadi, Kaveh; Razzak, Towhidur; Stemmer, Susanne; Rajan, Siddharth (January 2020, ACS Applied Electronic Materials)

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2. Enhanced domain dynamics in alternating current poled rhombohedral Pb(Mg _1/3 Nb _2/3 )O ₃ –PbTiO ₃ single crystals

   https://doi.org/10.1111/jace.20610  

   Sun, Jeong‐Woo; Fluerasu, Andrei; Xu, Zhengze; Liu, Sipan; Lee, Sang‐Goo; Jo, Wook; Jiang, Xiaoning; Ryu, Jong_Eun (April 2025, Journal of the American Ceramic Society)

   Abstract The understanding of domain dynamics in ferroelectric materials is crucial for optimizing their performance in piezoelectric and electro‐optic applications. Although previous studies have focused on static domain structures and macroscopic characteristics, the time‐resolved approach of domains remains largely unexplored. In this study, we compare the dynamic responses of direct current (DC) and alternating current (AC) poled [001]‐oriented rhombohedral Pb(Mg_1/3Nb_2/3)O₃–PbTiO₃(PMN–PT) single crystals using X‐ray photon correlation spectroscopy (XPCS) during the application of external electric fields. Our results demonstrate that the AC‐poled sample exhibit enhanced reconfiguration of domain variants in response to driving fields compared to the DC‐poled counterpart, as evidenced by accelerated correlation decay and faster relaxation time. This phenomenon is attributed to enhanced reversible domain wall motion achieved through AC poling, which facilitates field‐induced domain realignment. These findings provide insight into the relationship between dynamics and macroscopic properties in relaxor‐PT single crystals for high‐performance applications. 

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3. Thermally generated spin current in the topological insulator Bi ₂ Se ₃

   https://doi.org/10.1126/sciadv.adi4540  

   Jain, Rakshit; Stanley, Max; Bose, Arnab; Richardella, Anthony R.; Zhang, Xiyue S.; Pillsbury, Timothy; Muller, David A.; Samarth, Nitin; Ralph, Daniel C. (December 2023, Science Advances)

   We present measurements of thermally generated transverse spin currents in the topological insulator Bi₂Se₃, thereby completing measurements of interconversions among the full triad of thermal gradients, charge currents, and spin currents. We accomplish this by comparing the spin Nernst magneto-thermopower to the spin Hall magnetoresistance for bilayers of Bi₂Se₃/CoFeB. We find that Bi₂Se₃does generate substantial thermally driven spin currents. A lower bound for the ratio of spin current density to thermal gradient is $\frac{J_s}{{\mathbf{\nabla }}_{\mathit{x}}\mathit{T}}$= (4.9 ± 0.9) × 10⁶ $\left(\frac{\hslash }{2e}\right)\frac{\mathbf{A}{\mathbf{m}}^{-2}}{\mathbf{K}\text{μ}{\mathbf{m}}^{-1}}$, and a lower bound for the magnitude of the spin Nernst ratio is −0.61 ± 0.11. The spin Nernst ratio for Bi₂Se₃is the largest among all materials measured to date, two to three times larger compared to previous measurements for the heavy metals Pt and W. Strong thermally generated spin currents in Bi₂Se₃can be understood via Mott relations to be due to an overall large spin Hall conductivity and its dependence on electron energy. 

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4. Thermal Simulations of High Current β-Ga ₂ O ₃ Schottky Rectifiers

   https://doi.org/10.1149/2.0361907jss  

   Sharma, Ribhu; Patrick, Erin; Law, Mark E.; Yang, Jiancheng; Ren, F.; Pearton, S. J. (January 2019, ECS Journal of Solid State Science and Technology)
5. High Breakdown Current Density in Monolayer Nb ₄ C ₃ T _x MXene

   https://doi.org/10.1021/acsmaterialslett.1c00324  

   Lipatov, Alexey; Loes, Michael J.; Vorobeva, Nataliia S.; Bagheri, Saman; Abourahma, Jehad; Chen, Hanying; Hong, Xia; Gogotsi, Yury; Sinitskii, Alexander (August 2021, ACS Materials Letters)